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BTA208-600E
3Q Hi-Com Triac
Product profile1.1 General descriptionPlanar passivated high commutation three quadrant triac in a SOT78 plastic package.
This "series E" triac balances the requirements of commutation performance and gate
sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers
including microcontrollers.
1.2 Features and benefits 3Q technology for improved noise
immunity Direct interfacing with low power
drivers and microcontrollers Good immunity to false turn-on by
dV/dt High commutation capability with
sensitive gate High voltage capability Planar passivated for voltage
ruggedness and reliability Triggering in three quadrants only
1.3 Applications Electronic thermostats General purpose motor controls
1.4 Quick reference data A208-600E
3Q Hi-Com Triac
Rev. 05 — 12 April 2011 Product data sheet
Table 1. Quick reference dataVDRM repetitive peak
off-state voltage
--600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) =25°C; tp=20 ms; see Figure 4;
see Figure 5
--65 A
IT(RMS) RMS on-state current full sine wave; Tmb≤ 102 °C;
see Figure 1; see Figure 2; see Figure 3
--8 A
Static characteristicsIGT gate trigger current VD =12V; IT= 0.1 A; T2+ G+; =25 °C; see Figure 7
--10 mA =12V; IT= 0.1 A; T2+ G-; =25 °C; see Figure 7
--10 mA =12V; IT= 0.1 A; T2- G-; Tj=25 °C; see Figure 7 --10 mA
NXP Semiconductors BTA208-600E
3Q Hi-Com Triac Pinning information Ordering information Limiting values
Table 2. Pinning information T1 main terminal 1
SOT78 (TO-220AB) T2 main terminal 2 G gate T2 mounting base; main terminal 2
Table 3. Ordering informationBTA208-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb≤ 102 °C; see Figure 1;
see Figure 2; see Figure 3 A
ITSM non-repetitive peak on-state
current
full sine wave; Tj(init) =25 °C; tp=20 ms;
see Figure 4; see Figure 5
-65 A
full sine wave; Tj(init) =25 °C; tp =16.7ms - 72 A
I2tI2t for fusing tp=10 ms; sine-wave pulse - 21 A2s
dIT/dt rate of rise of on-state current IT =12 A; IG= 0.2 A; dIG/dt= 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
VGM peak gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BTA208-600E
3Q Hi-Com Triac
NXP Semiconductors BTA208-600E
3Q Hi-Com Triac
NXP Semiconductors BTA208-600E
3Q Hi-Com Triac Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
full cycle; see Figure 6 --2 K/W
half cycle; see Figure 6 --2.4 K/W
Rth(j-a) thermal resistance from junction to
ambient
in free air - 60 - K/W
NXP Semiconductors BTA208-600E
3Q Hi-Com Triac Characteristics
Table 6. Characteristics
Static characteristicsIGT gate trigger current VD =12V; IT= 0.1 A; T2+ G+; Tj =25°C;
see Figure 7
--10 mA =12V; IT= 0.1 A; T2+ G-; Tj =25 °C;
see Figure 7
--10 mA =12V; IT= 0.1 A; T2- G-; Tj =25°C;
see Figure 7
--10 mA latching current VD =12V; IG= 0.1 A; T2+ G+; Tj =25°C;
see Figure 8
--25 mA =12V; IG= 0.1 A; T2+ G-; Tj =25°C;
see Figure 8
--30 mA =12V; IG= 0.1 A; T2- G-; Tj =25°C;
see Figure 8
--30 mA holding current VD =12V; Tj =25°C; see Figure 9 --25 mA on-state voltage IT =10A; Tj =25 °C; see Figure 10 --1.65 V
VGT gate trigger voltage VD =12V; IT= 0.1 A; Tj =25°C;
see Figure 11
--1.5 V= 400 V; IT= 0.1 A; Tj =125 °C;
see Figure 11
0.25 - - V off-state current VD= 600 V; Tj= 125°C --0.5 mA
Dynamic characteristicsdVD/dt rate of rise of off-state
voltage
VDM =402 V; Tj= 110 °C; exponential
waveform; gate open circuit --V/µs
dIcom/dt rate of change of
commutating current= 400 V; Tj =125 °C; IT(RMS) =8A;
dVcom/dt= 0.1 V/µs; gate open circuit --A/ms= 400 V; Tj =125 °C; IT(RMS) =8A;
dVcom/dt=10 V/µs; gate open circuit;
see Figure 12 --A/ms
NXP Semiconductors BTA208-600E
3Q Hi-Com Triac
