BTA201-600E Fast Delivery |IC PHOENIX CO.,LIMITED

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BTA201-600E
3Q Hi-Com Triac
A201-600E3Q Hi-Com Triac15 October 2012 Product data sheet Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plasticpackage. This "series E" triac balances the requirements of commutation performanceand gate sensitivity and is intended for interfacing with low power drivers and logic ICsincluding microcontrollers.
1.2 Features and benefits 3Q technology for improved noise immunity• Direct triggering from low power drivers and logic ICs• High commutation capability with sensitive gate• High immunity to false turn-on by dV/dt• High voltage capability• Planar passivated for voltage ruggedness and reliability• Sensitive gate for easy logic level triggering• Triggering in three quadrants only
1.3 Applications General purpose motor control• Small loads in washing machines• Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 12.5 A
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 54 °C; Fig. 1;
Fig. 2; Fig. 3 - 1 A
Static characteristics - 10 mA
NXP Semiconductors BTA201-600E
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 10 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T2 main terminal 2 G gate T1 main terminal 123
TO-92 (SOT54)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA201-600E TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tlead ≤ 54 °C; Fig. 1;
Fig. 2; Fig. 3 1 A
full sine wave; Tj(init) = 25 °C;
tp = 16.8 ms 13.7 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 12.5 A2t I2 t for fusing tp = 10 ms; SIN - 0.78 A2s
dIT/dt rate of rise of on-state current IT 1.5 A; IG 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
NXP Semiconductors BTA201-600E
3Q Hi-Com Triac
Symbol Parameter Conditions Min Max Unit
PG(AV) average gate power over any 20 ms period - 0.1 W junction temperature -40 125 °C
-50 0 50 100 150
54.3 °C
IT(RMS)
(A)
Tlead (°C)
003aaa957
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values 100
surge duration (s)
IT(RMS)
(A)
003aaa958
f = 50 Hz; Tlead = 54 °C
Fig. 2. RMS on-state current as a function of surgeduration; maximum values
1.5 1.2
003aaa954
Ptot
(W) α = 180°
120°
90°
60°
30°
conductionangle(degrees)
formfactora60901201802.82.21.91.57
NXP Semiconductors BTA201-600E
3Q Hi-Com Triac
003aaa955
tp (s)10-5 10-110-210-4 10-3
ITSM(A)
(1)
ITSM
Tj(init) = 25 °C max
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values 10 102 103
ITSM(A)
number of cycles (n) 003aaa956
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values Max Unit 60 K/W 80 K/W - K/W
NXP Semiconductors BTA201-600E
3Q Hi-Com Triac
Zth(j-lead)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
(1)
(2)
102 003aaa961
(1) Unidirectional (half cycle)(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 - 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - 10 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - 10 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 - 12 mA
VD = 12 V; IG = 0.1 A; T2+ G-; - 20 mA latching current 12 mA 12 mA 1.5 V - V 1.5 V 0.5 mA
NXP Semiconductors BTA201-600E
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
600 - - V/µs
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 20 V/s; (snubberless
condition); gate open circuit
2.5 - - A/msdIcom/dt rate of change of commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A;
dVcom/dt = 10 V/µs; gate open circuit
3.5 - - A/ms
IGT
IGT(25°C) (°C)-50 0 15010050
003aaa959
(1)(2)
(3)
(1)
(2)
(3)
(1) T2- G-(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj (°C)-50 1501000 50
003aak510
IL(25°C)
Fig. 8. Normalized latching current as a function ofjunction temperature

Partno	Mfg	Dc	Qty	Available	Descript
BTA201-600E \|BTA201600E	PHILIPS	N/a	100	avai	3Q Hi-Com Triac