BTB08-600S ,Sensitive gate triac, 8A, 600VFEATURES. VERY LOW I = 10mA maxGT. LOW I = 25mA maxH. BTA Family :INSULATING VOLTAGE = 2500V(RMS)(U ..
BTB08-600SWRG ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
BTB08-600TWRG ,Triac, 600V, 8AABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
BTB08-800CWRG ,8A TRIACSBTA/BTB08 and T8 Series®SNUBBERLESS™, LOGIC LEVEL & STANDARD 8A TRIACS MAIN
BTB08-800TW ,Triac, 800V, 8AFEATURES:A2A2 A2Symbol Value UnitGI8AT(RMS) A1A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
BTB08-800TWRG ,8A TRIACSFEATURES:A2A2 A2Symbol Value UnitGI 8AA1T(RMS)A1A2A2A1GGV /V600 and 800 VDRM RRM2DPAK D PAK(T8-B) ( ..
BZX84C20 ,350mW ZENER DIODE 3.3 VOLTS THRU 33 VOLTS 5% TOLERANCEAbsolute Maximum RatingsT = 25
BTA08-400A-BTB08-600S
SENSITIVE GATE TRIACS
BTA08 S /A
BTB08 S /ASENSITIVE GATE TRIACS
Symbol Parameter Value UnitIT(RMS) RMS on-state current
(360° conduction angle)
BTA Tc= 75°C8 A
BTB Tc= 80°C
ITSM Non repetitive surge peak on-state currentTj initial= 25°C)=8.3 ms 84 A=10ms 80
I2tI2t value tp=10ms 32 A2s
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 50mA diG/dt= 0.1A/μs
Repetitive=50Hz A/μs
Non
Repetitive
Tstg
Storage and operating junction temperature range - 40to+ 150 40to+ 110 Maximum lead temperaturefor soldering during10sat 4.5 mm
from case
260 °C
TO220AB(Plastic)
G VERY LOW IGT= 10mA max. LOWIH= 25mA max. BTA Family:
INSULATING VOLTAGE= 2500V(RMS)
(UL RECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTA/ BTB08- Unit
400 S/A 600 S/A 700 S/AVDRM
VRRM
Repetitive peak off-state voltage= 110°C
400 600 700 V
ABSOLUTE RATINGS (limiting values)
FEATURESThe BTA/BTB08 S/A triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivityis required.
Applicationon 4Q suchas phase control and static
switching.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value UnitRth (j-a) Junctionto ambient 60 °C/W
Rth (j-c) DC Junctionto caseforDC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junctionto casefor 360° conduction angleF=50 Hz)
BTA 3.3 °C/W
BTB 2.4
Symbol Test Conditions Quadrant Suffix UnitIGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 10 10 mA MAX 10 25
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG= 40mA
dIG/dt= 0.5A/μs
Tj=25°C I-II-III-IV TYP 2 μs IG= 1.2 IGT Tj=25°C I-III-IV TYP 20 20 mA 40 40 *IT= 100mA gate open Tj=25°C MAX 25 25 mA
VTM *ITM= 11A tp= 380μs Tj=25°C MAX 1.75 V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.75
dV/dt* Linear slopeupto VD=67%VDRM
gate open
Tj=110°C MIN 10 10 V/μs
(dV/dt)c* (dI/dt)c= 3.5A/ms Tj=110°C TYP 5 5 V/μsFor either polarityof electrodeA2 voltage with referenceto electrodeA1. (AV) =1W PGM= 10W(tp=20 μs) IGM=4A(tp=20 μs) VGM= 16V(tp=20 μs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA08 S/A/ BTB08 S/A
Package IT(RMS) VDRM /VRRM Sensitivity Specification S ABTA
(Insulated) 400 X X
600 X X
700 X X
BTB
(Uninsulated)
400 X X
600 X X
700 X X
ORDERING INFORMATIONFig.1: Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves arecutoffby (dI/dt)c limitation)
Fig.2: Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase)for different thermal resistances heatsink+
contact (BTA).
Fig.4: RMS on-state current versus case temperature.Fig.3: Correlation between maximum RMS power
dissipation and maximum allowable temperatures(T amb
and Tcase)for different thermal resistances heatsink+
contact (BTB).
BTA08 S/A/ BTB08 S/A
Fig.6: Relative variationof gate trigger current and
holding current versus junction temperature.
Fig.7: Non Repetitive surge peak on-state current
versus numberof cycles.
Fig.8: Non repetitive surge peak on-state currentfora
sinusoidal pulse with width:t ≤ 10ms, and
corresponding valueof I2t.
Fig.9: On-state characteristics (maximum values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)Fig.5: Relative variationof thermal impedance versus
pulse duration.
BTA08 S/A/ BTB08 S/A
PACKAGE MECHANICAL DATATO220AB Plastic
Cooling method:C
Marking: type number
Weight:2.3g
Recommended torque value:0.8 m.N.
Maximum torque value:1 m.N.
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 10.20 10.50 0.401 0.413
14.23 15.87 0.560 0.625
12.70 14.70 0.500 0.579
5.85 6.85 0.230 0.270
4.50 0.178
2.54 3.00 0.100 0.119
4.48 4.82 0.176 0.190
3.55 4.00 0.140 0.158
1.15 1.39 0.045 0.055
0.35 0.65 0.013 0.026
2.10 2.70 0.082 0.107
4.58 5.58 0.18 0.22
0.80 1.20 0.031 0.048
0.64 0.96 0.025 0.038
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability
forthe consequencesof useof such informationnorfor any infringementof patentsor other rightsof third parties which may
result fromits use. Nolicense isgranted byimplication orotherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.
Specifications mentionedin this publication are subjectto change without notice. This publication supersedes and replacesall
information previously supplied.
SGS-THOMSON Microelectronics products arenot authorizedfor useas critical componentsinlife support devicesor systems
without express written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia- Brazil- France- Germany- Hong Kong- Italy- Japan- Korea- Malaysia- Malta- Morocco- The Nether-
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BTA08 S/A/ BTB08 S/A
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