BT152X-600R Fast Delivery |IC PHOENIX CO.,LIMITED

BT152X-600R ,Thyristorsapplications I Average on-state current 13 13 13 AT(AV)include motor control, industrial and I RMS ..
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BZW04-188 ,Unidirectional and bidirectional Transient Voltage Suppressor DiodesFEATURESPEAK PULSE POWER : 400 W (10/1000μs)STAND-OFF VOLTAGERANGE :From 5.8V to 376 VUNI AND BIDIR ..
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BZW04-40 ,Unidirectional and bidirectional Transient Voltage Suppressor DiodesFEATURESn PEAK PULSE POWER : 400 W (10/1000μs)n STAND-OFF VOLTAGE RANGE :From 5.8V to 376 Vn UNI AN ..

BT152X-600R
Thyristors
Philips Semiconductors Product specification
Thyristors BT152X series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated thyristorsina full SYMBOL PARAMETER MAX. MAX. MAX. UNIT
pack, plastic envelope, intended forusein applications requiring high BT152X- 400R 600R 800R
bidirectional blocking voltage VDRM, Repetitive peak off-state 450 650 800 V
capability and high thermal cycling VRRM voltagesperformance. Typical applications I T(AV) Average on-state current 13 13 13 A
include motor control, industrial and IT(RMS) RMS on-state current 20 20 20 A
domestic lighting, heating and static ITSM Non-repetitive peak on-state 200 200 200 Aswitching. current
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION cathode anode gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-400R -600R -800R
VDRM Repetitive peak off-state - 4501 6501 800 V
voltages
IT(AV) Average on-state current half sine wave; Ths ≤ 43 ˚C - 13 A
IT(RMS) RMS on-state current all conduction angles - 20 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 200 A
t = 8.3 ms - 220 A2 tI2 t for fusing t = 10 ms - 200 A2s
dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 5 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 20 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperature123
case
Philips Semiconductors Product specification
Thyristors BT152X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance with heatsink compound - - 4.0 K/W
junction to heatsink
Rth j-hs Thermal resistance without heatsink compound - - 5.5 K/W
junction to heatsink
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 3 32 mA Latching current VD = 12 V; IGT = 0.1 A - 25 80 mA Holding current VD = 12 V; IGT = 0.1 A - 15 60 mA On-state voltage IT = 40 A - 1.4 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.2 1.0 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 200 300 - V/μs
off-state voltage exponential waveform gate open circuit
tgt Gate controlled turn-on VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs; - 2 - μs
time ITM = 40 A Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
Philips Semiconductors Product specification
Thyristors BT152X series
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 43˚C. 5 10 150
IF(AV) / A
Ptot / W Ths(max) / C
125 10 100 10000
Number of half cycles at 50Hz
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
-50 0 50 100 1500
Ths / C
IT(RMS) / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Thyristors BT152X series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C) 50 100 15010
Tj / C
dVD/dt (V/us)
Philips Semiconductors Product specification
Thyristors BT152X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3
Philips Semiconductors Product specification
Thyristors BT152X series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

Partno	Mfg	Dc	Qty	Available	Descript
BT152X-600R \|BT152X600R	PHILIPS	N/a	4	avai	Thyristors