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BT152-800R
SCR
Product profile1.1 General descriptionPlanar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability and high
thermal cycling performance.
1.2 Features and benefits High thermal cycling performance High voltage capability Planar passivated for voltage
ruggedness and reliability Very high current surge capability
1.3 Applications Ignition circuits Motor control Protection circuits e.g. SMPS inrush
current Voltage regulation
1.4 Quick reference data
BT152-800R
SCR
Rev. 2 — 9 June 2011 Product data sheet
Table 1. Quick reference dataVDRM repetitive peak off-state
voltage
--800 V
VRRM repetitive peak reverse
voltage
--800 V
ITSM non-repetitive peak on-state current half sine wave; Tj(init) =25 °C; tp=10 ms; see Figure 4;
see Figure 5
--200 A
half sine wave; Tj(init) =25 °C; =8.3ms
--220 A
IT(AV) average on-state current half sine wave; Tmb≤ 103 °C; see Figure 3 --13 A
IT(RMS) RMS on-state current half sine wave; see Figure 1;
see Figure 2
--20 A
Static characteristicsIGT gate trigger current VD =12 V; IT =0.1A; =25°C; see Figure 7 32 mA
NXP Semiconductors BT152-800R
SCR Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationBT152-800R TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage - 800 V
VRRM repetitive peak reverse voltage - 800 V
IT(AV) average on-state current half sine wave; Tmb≤ 103 °C; see Figure 3 -13 A
IT(RMS) RMS on-state current half sine wave; see Figure 1; see Figure 2 -20 A
ITSM non-repetitive peak on-state
current
half sine wave; Tj(init) =25°C; tp=10 ms;
see Figure 4; see Figure 5 200 A
half sine wave; Tj(init) =25°C; tp= 8.3 ms - 220 A
I2t I2t for fusing tp=10 ms; sine-wave pulse - 200 A2s
dIT/dt rate of rise of on-state current IT =50A; IG= 200 mA; dIG/dt= 200 mA/µs - 200 A/µs
IGM peak gate current - 5 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 20 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT152-800R
SCR
NXP Semiconductors BT152-800R
SCR
NXP Semiconductors BT152-800R
SCR Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
see Figure 6 --1.1 K/W
Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W
NXP Semiconductors BT152-800R
SCR Characteristics
Table 6. Characteristics
Static characteristicsIGT gate trigger current VD =12 V; IT =0.1 A; Tj =25°C;
see Figure 7 32 mA latching current VD =12 V; IG= 0.1 A; Tj =25 °C;
see Figure 8 2580mA holding current VD =12 V; Tj =25°C; see Figure 9 - 1560mA on-state voltage IT =40A; Tj=25 °C; see Figure 10 - 1.4 1.75 V
VGT gate trigger voltage VD =12 V; IT =0.1 A; Tj =25°C;
see Figure 11
-0.6 1.5 V= 800 V; IT= 0.1 A; Tj= 125°C 0.25 0.4 - V off-state current VD= 800 V; Tj= 125°C - 0.2 1 mA reverse current Tj= 125 °C; VR= 800V - 0.2 1 mA
Dynamic characteristicsdVD/dt rate of rise of off-state voltage VDM =536 V; Tj= 125 °C; exponential
waveform; gate open circuit;
see Figure 12
200 300 - V/µs
tgt gate-controlled turn-on time ITM =40A; VD= 800 V; IG= 100 mA;
dIG/dt=5 A/µs -µs commutated turn-off time VDM =536 V; Tj= 125 °C; ITM =50A; =25 V; (dIT/dt)M=30 A/µs;
dVD/dt=50 V/µs; RGK= 100Ω
-70 -µs
