BT152-600R ,Thyristorapplications requiring high BT152- 400R 600R 800Rbidirectional blocking voltage V , Repetitive peak ..
BT152-800R ,SCRApplications Ignition circuits Protection circuits e.g. SMPS inrush current Motor control Volta ..
BT152B-400R ,Thyristorsapplications requiring high V , Repetitive peak off-state 450 650 800 VDRMbidirectional blocking vo ..
BT152B-600R ,ThyristorsGENERAL DESCRIPTION QUICK REFERENCE DATAGlasspassivated thyristors ina plastic SYMBOL PARAMETER MAX ..
BT152B-800R ,Thyristorsapplications I RMS on-state current 20 20 20 AT(RMS)include motor control, industrial and I Non-rep ..
BT152X-600R ,Thyristorsapplications I Average on-state current 13 13 13 AT(AV)include motor control, industrial and I RMS ..
BZW03D36 ,Silicon Z-Diodes and Transient Voltage SuppressorsElectrical CharacteristicsT = 25
BT152-600R
Thyristor
��� Semiconductors Product specification
Thyristors BT152 series
GENERAL DESCRIPTION QUICK REFERENCE DATAGlasspassivatedthyristorsin aplastic
SYMBOL PARAMETER MAX. MAX. MAX. UNITenvelope, intended for use in
applications requiring high
BT152- 400R 600R 800Rbidirectional blocking voltage VDRM, Repetitive peak off-state 450 650 800 V
capability and high thermal cycling VRRM voltages
performance. Typical applications I T(AV) Average on-state current 13 13 13 A
include motor control, industrial and IT(RMS) RMS on-state current 20 20 20 A
domestic lighting, heating and static ITSM Non-repetitive peak on-state 200 200 200 A
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION cathode anode gate
tab anode
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-400R -600R -800RVDRM Repetitive peak off-state - 4501 6501 800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 103 ˚C - 13 A
IT(RMS) RMS on-state current all conduction angles - 20 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 200 A
t = 8.3 ms - 220 A2 tI2 t for fusing t = 10 ms - 200 A2s
dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/μs
on-state current after dIG/dt = 0.2 A/μs
triggering
IGM Peak gate current - 5 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 20 W
PG(AV) Average gate power over any 20 ms period - 0.5 Wstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperature123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor mayswitch to the on-state. The rate of rise of current should not exceed 15 A/μs.
��� Semiconductors Product specification
Thyristors BT152 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT th j-mb Thermal resistance - - 1.1 K/W
junction to mounting base
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITGT Gate trigger current VD = 12 V; IT = 0.1 A - 3 32 mA Latching current VD = 12 V; IGT = 0.1 A - 25 80 mA Holding current VD = 12 V; IGT = 0.1 A - 15 60 mA On-state voltage IT = 40 A - 1.4 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.2 1.0 mA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITdVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 200 300 - V/μs
off-state voltage exponential waveform gate open circuit
tgt Gate controlled turn-on VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs; - 2 - μs
time ITM = 40 A Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
NXP Semiconductors Product specification
Thyristors BT152 series
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 103˚C. 5 10 150
IT(AV) / A
Ptot / W Tmb(max) / C
125 10 100 10000
Number of half cycles at 50Hz
ITSM / A
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
����Semiconductors Product specification
Thyristors BT152 series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH (25˚C),
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C) 50 100 15010
Tj / C
dVD/dt (V/us)
����Semiconductors Product specification
Thyristors BT152 series
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,03,0 max
not tinned
1,3
max
(2x) 3
2,4
0,6
4,5
max
5,9min
15,8max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
