BT151X-650R Fast Delivery |IC PHOENIX CO.,LIMITED

BT151X-650R ,SCRapplications I Average on-state current 5.7 5.7 5.7 AT(AV)include motor control, industrial and I R ..
BT151X-650R ,SCRGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated thyristors in a full pack, SYMBOL PARAMETER MAX. ..
BT151X-650R ,SCRApplications• Capacitive Discharge Ignition (CDI)Crowbar protection•• Inrush protectionMotor contro ..
BT151X-800R ,SCRPIN CONFIGURATION SYMBOLPIN DESCRIPTIONcase1 cathodeak2 anode3 gateg12 3case isolated
BT152-600R ,Thyristorapplications requiring high BT152- 400R 600R 800Rbidirectional blocking voltage V , Repetitive peak ..
BT152-800R ,SCRApplications Ignition circuits Protection circuits e.g. SMPS inrush current Motor control Volta ..
BZW03C7V5 ,Silicon Z-Diodes and Transient Voltage SuppressorsElectrical CharacteristicsT = 25

BT151X-650R
SCR
TO-220F BT151X-650R
SCR 16 March 2014 Product data sheet General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack"plastic package intended for use in applications requiring high bidirectional blockingvoltage and high current surge capability with high thermal cycling performance. Features and benefits High bidirectional blocking voltage capability• High current surge capability• High thermal cycling performance• Isolated mounting base package• Planar passivated for voltage ruggedness and reliability Applications Capacitive Discharge Ignition (CDI)• Crowbar protection• Inrush protection• Motor control• Voltage regulation Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 650 V
VRRM repetitive peak reversevoltage - - 650 V
ITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 120 A
IT(RMS) RMS on-state current half sine wave; Th ≤ 69 °C; Fig. 1;
Fig. 2; Fig. 3 - 12 A
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 2 15 mA
NXP Semiconductors BT151X-650R
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode A anode G gate n.c. mounting base; isolated21
TO-220F (SOT186A)
sym037 K Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT151X-650R TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 650 V
VRRM repetitive peak reverse voltage - 650 V
IT(AV) average on-state current half sine wave; Th ≤ 69 °C - 7.5 A
IT(RMS) RMS on-state current half sine wave; Th ≤ 69 °C; Fig. 1;
Fig. 2; Fig. 3 12 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 120 AITSM non-repetitive peak on-state
current
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 132 A2t I2 t for fusing tp = 10 ms; SIN - 72 A2s 50 A/µs - 2 A
NXP Semiconductors BT151X-650R
SCR
Symbol Parameter Conditions Min Max Unit
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
003aaj922-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of surgeduration; maximum values
Th (°C)-50 1501000 50
003aaj923
IT(RMS)(A)
69 °C
Fig. 2. RMS on-state current as a function of heatsinktemperature; maximum values 8
003aaj919
Ptot
(W)
Th(max)
(°C)
a = 1.57
conductionangle
formfactor
NXP Semiconductors BT151X-650R
SCR
003aaj920
ITSM(A)
n (number of cycles)1 10310210
Tj(init) = 25 °C max ITSM
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
003aaj921
tp (s)10-5 10-210-310-4
ITSM(A)
(1)
Tj(init) = 25 °C max ITSM
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values Max Unit 4.5 K/W 6.5 K/W - K/W
NXP Semiconductors BT151X-650R
SCR
003aaj933
Zth(j-h)
(K/W)
tp (s)10-5 1 1010-110-210-4 10-3δ=
(2)
(1)
(1) Without heatsink compound
(2) With heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dustfree; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
Th = 25 °C - 2500 V
Cisol isolation capacitance from anode to external heatsink;
f = 1 MHz; Th = 25 °C 10 - pF
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit 15 mA 40 mA 20 mA 1.75 V 1 V - V
NXP Semiconductors BT151X-650R
SCR
Symbol Parameter Conditions Min Typ Max Unit off-state current VD = 650 V; Tj = 125 °C - 0.1 0.5 mA reverse current VR = 650 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
VDM = 436 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12
200 1000 - V/µsdVD/dt rate of rise of off-statevoltage
VDM = 436 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12 130 - V/µs
tgt gate-controlled turn-ontime ITM = 40 A; VD = 650 V; IG = 100 mA;
dIG/dt = 5 A/µs; Tj = 25 °C 2 - µs commutated turn-offtime VDM = 436 V; Tj = 125 °C; ITM = 20 A;
VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 50 V/µs; RGK = 100 Ω; (VDM = 67%
of VDRM) 70 - µs
Tj(°C)-50 1501000 50
001aaa952
IGT
IGT(25°C)
Fig. 7. Normalized gate trigger current as a function ofjunction temperature (°C)-50 1501000 50
001aaa951
IL(25°C)
Fig. 8. Normalized latching current as a function ofjunction temperature

Partno	Mfg	Dc	Qty	Available	Descript
BT151X-650R \|BT151X650R	NXP	N/a	240	avai	SCR