BT151X-800R ,SCRPIN CONFIGURATION SYMBOLPIN DESCRIPTIONcase1 cathodeak2 anode3 gateg12 3case isolated
BT152-600R ,Thyristorapplications requiring high BT152- 400R 600R 800Rbidirectional blocking voltage V , Repetitive peak ..
BT152-800R ,SCRApplications Ignition circuits Protection circuits e.g. SMPS inrush current Motor control Volta ..
BT152B-400R ,Thyristorsapplications requiring high V , Repetitive peak off-state 450 650 800 VDRMbidirectional blocking vo ..
BT152B-600R ,ThyristorsGENERAL DESCRIPTION QUICK REFERENCE DATAGlasspassivated thyristors ina plastic SYMBOL PARAMETER MAX ..
BT152B-800R ,Thyristorsapplications I RMS on-state current 20 20 20 AT(RMS)include motor control, industrial and I Non-rep ..
BZW03C82 ,Silicon Z-Diodes and Transient Voltage SuppressorsFeatures
BT151X-500R-BT151X-650R-BT151X-800R
Thyristors
Philips Semiconductors Product specification
Thyristors BT151X series
GENERAL DESCRIPTION QUICK REFERENCE DATAPassivated thyristorsina full pack,
SYMBOL PARAMETER MAX. MAX. MAX. UNITplastic envelope, intended for useinapplications requiring high
BT151X- 500 650 800bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling VRRM voltagesperformance. Typical applications I T(AV) Average on-state current 5.7 5.7 5.7 A
include motor control, industrial and IT(RMS) RMS on-state current 9 9 9 A
domestic lighting, heating and static ITSM Non-repetitive peak on-state 100 100 100 Aswitching. current
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION cathode anode gate
case isolated
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -650 -800VDRM, VRRM Repetitive peak off-state - 5001 6501 800 V
voltages
IT(AV) Average on-state current half sine wave; Ths ≤ 87 ˚C - 5.7 A
IT(RMS) RMS on-state current all conduction angles - 9 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A2 tI2 t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/μs
on-state current after dIG/dt = 50 mA/μs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperature123
case
Philips Semiconductors Product specification
Thyristors BT151X series
ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVisol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-hs Thermal resistance with heatsink compound - - 4.5 K/W
junction to heatsink without heatsink compound - - 6.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITIGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA On-state voltage IT = 23 A - 1.4 1.75 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITdVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C;
off-state voltage exponential waveform
Gate open circuit 50 130 - V/μs
RGK = 100 Ω 200 1000 - V/μs
tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs Circuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs
turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs;
dVD/dt = 50 V/μs; RGK = 100 Ω
Philips Semiconductors Product specification
Thyristors BT151X series
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 87˚C. 12345 60
IF(AV) / A
Ptot / W
125Ths(max) / C 10 100 10000
Number of half cycles at 50Hz
ITSM / A
10us 100us 1ms 10ms
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A
-50 0 50 100 1500
Ths / C
IT(RMS) / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Thyristors BT151X series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-hs (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25 C) 50 100 15010
Tj / C
dVD/dt (V/us)
Philips Semiconductors Product specification
Thyristors BT151X series
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3
Philips Semiconductors Product specification
Thyristors BT151X series
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
