BT151S-650L ,SCRApplicationsn Motor control n Static switchingn Ignition circuits n Protection circuits1.4 Quick re ..
BT151U-800C ,Thyristorsapplications I Average on-state current 7.5 7.5 7.5 AT(AV)include motor control, industrial I RMS o ..
BT151X-500R ,ThyristorsPhilips Semiconductors Product specification Thyristors BT151X series
BT151X-650R ,SCRapplications I Average on-state current 5.7 5.7 5.7 AT(AV)include motor control, industrial and I R ..
BT151X-650R ,SCRGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated thyristors in a full pack, SYMBOL PARAMETER MAX. ..
BT151X-650R ,SCRApplications• Capacitive Discharge Ignition (CDI)Crowbar protection•• Inrush protectionMotor contro ..
BZW03-C39 ,Voltage regulator diodes
BZW03-C39 ,Voltage regulator diodes
BZW03C47 ,Silicon Z-Diodes and Transient Voltage SuppressorsElectrical CharacteristicsT = 25
BT151S-500L-BT151S-650L
SCR
Product profile1.1 General descriptionPassivated thyristors in a SOT428 plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BT151S series L and R
Thyristors
Rev. 05 — 9 October 2006 Product data sheet High thermal cycling performance n Surface-mounted package High bidirectional blocking voltage
capability Motor control n Static switching Ignition circuits n Protection circuits VDRM≤ 500 V (BT151S-500L/R) n ITSM≤ 120 A (t=10 ms) VRRM≤ 500 V (BT151S-500L/R) n IT(RMS)≤12A VDRM≤ 650 V (BT151S-650L/R) n IT(AV)≤ 7.5A VRRM≤ 650 V (BT151S-650L/R) n IGT≤5 mA (BT151S series L) VDRM≤ 800 V (BT151S-800R) n IGT≤15 mA (BT151S series R) VRRM≤ 800 V (BT151S-800R)
Table 1. Pinning cathode (K)
SOT428 (DPAK) anode (A) gate (G) mounting base; connected to anode
sym037
NXP Semiconductors BT151S series L and R
Thyristors Ordering information Limiting values[1] Althoughnot recommended, off-state voltagesupto 800V maybe applied without damage,butthe thyristor may switchtothe on-state.
The rate of rise of current should not exceed 15A/μs.
Table 2. Ordering informationBT151S-500L DPAK plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state voltage BT151S-500L; BT151S-500R [1]- 500 V
BT151S-650L; BT151S-650R [1]- 650 V
BT151S-800R - 800 V
VRRM repetitive peak reverse voltage BT151S-500L; BT151S-500R [1]- 500 V
BT151S-650L; BT151S-650R [1]- 650 V
BT151S-800R - 800 V
IT(AV) average on-state current half sine wave; Tmb≤ 103 °C;
see Figure1 7.5 A
IT(RMS) RMS on-state current all conduction angles; see Figure4
and5
-12 A
ITSM non-repetitive peak on-state
current
half sine wave; Tj =25 °C prior to
surge; see Figure2 and3
t=10ms - 120 A= 8.3ms - 132 A2 tI2 t for fusing t=10 ms - 72 A2s
dIT/dt rate of rise of on-state current ITM=20 A; IG =50mA;
dIG/dt=50 mA/μs
-50 A/μs
IGM peak gate current - 2 A
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature −40 +150 °C junction temperature - 125 °C
NXP Semiconductors BT151S series L and R
Thyristors
NXP Semiconductors BT151S series L and R
Thyristors
NXP Semiconductors BT151S series L and R
Thyristors Thermal characteristics
Table 4. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure6 - - 1.8 K/W
Rth(j-a) thermal resistance from junction to
ambient
mounted on an FR4
printed-circuit board; see
Figure14 75 - K/W
NXP Semiconductors BT151S series L and R
Thyristors Characteristics
Table 5. CharacteristicsTj = 25 °C unless otherwise stated.
Static characteristicsIGT gate trigger current VD=12 V; IT= 100 mA; see Figure8
BT151S-500L - 2 5 mA
BT151S-500R - 2 15 mA
BT151S-650L - 2 5 mA
BT151S-650R - 2 15 mA
BT151S-800R - 2 15 mA latching current VD=12 V; IGT= 100 mA; see
Figure10 1040mA holding current VD=12 V; IGT= 100 mA; see
Figure11 7 20 mA on-state voltage IT=23 A; see Figure9 - 1.4 1.75 V
VGT gate trigger voltage IT= 100 mA; VD=12 V; see Figure7 - 0.6 1.5 V= 100 mA; VD =VDRM(max);= 125°C
0.25 0.4 - V off-state current VD =VDRM(max); Tj= 125°C - 0.1 0.5 mA reverse current VR =VRRM(max); Tj= 125°C - 0.1 0.5 mA
Dynamic characteristicsdVD/dt rate of rise of off-state
voltage
VDM= 0.67 × VDRM(max); Tj= 125 °C;
exponential waveform; see Figure12
RGK= 100Ω 200 1000 - V/μs
gate open circuit 50 130 - V/μs
tgt gate-controlled turn-on
time
ITM=40 A; VD =VDRM(max);= 100 mA; dIG/dt=5 A/μs - μs commutated turn-off
time
VDM= 0.67 × VDRM(max); Tj= 125 °C;
ITM=20 A; VR =25V;
(dIT/dt)M =30A/μs; dVD/dt=50 V/μs;
RGK= 100Ω
-70 - μs
NXP Semiconductors BT151S series L and R
Thyristors
