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Partno	Mfg	Dc	Qty	Available	Descript
BT151-650R |BT151650R	PH	N/a	27	avai	SCR

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BT151-650R
SCR
BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
Rev. 05 — 27 February 2009 Product data sheet Product profile
1.1 General description
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
1.2 Features and benefits High reliability High surge current capability High thermal cycling performance
1.3 Applications Ignition circuits Motor control Protection Circuits Static switching
1.4 Quick reference data Table 1. Quick reference
VDRM repetitive peak
off-state voltage - 650 V
IT(AV) average on-state
current
half sine wave;
Tmb≤ 109 °C; see Figure 3
--7.5 A
IT(RMS) RMS on-state
current
half sine wave;
Tmb≤ 109 °C; see Figure 1;
see Figure 2
--12 A
Static characteristics
IGT gate trigger current VD =12V; Tj =25°C; =100 mA; see Figure 8 15 mA
NXP Semiconductors BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78 Pinning information Ordering information
Table 2. Pinning information K cathode
SOT78
(TO-220AB; SC-46) A anode gate mb anode
Table 3. Ordering information
BT151-650R TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDRM repetitive peak off-state
voltage
-650 V
VRRM repetitive peak reverse
voltage
-650 V
IT(AV) average on-state
current
half sine wave; Tmb≤ 109 °C; see Figure 3 -7.5 A
IT(RMS) RMS on-state current half sine wave; Tmb≤ 109 °C; see Figure 1; see
Figure 2
-12 A
dIT/dt rate of rise of on-state
current =20A; IG =50mA; dIG/dt=50 mA/µs - 50 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
ITSM non-repetitive peak
on-state current
half sine wave; tp= 8.3 ms; Tj(init) =25°C - 132 A
half sine wave; tp=10 ms; Tj(init) =25°C; see
Figure 4; see Figure 5
-120 A
I2t I2t for fusing tp=10 ms; sine-wave pulse - 72 A2s
PG(AV) average gate power over any 20 ms period - 0.5 W
VRGM peak reverse gate
voltage V
NXP Semiconductors BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78
NXP Semiconductors BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78 Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 6 --1.3 K/W
Rth(j-a) thermal resistance from
junction to ambient free
air
-60 - K/W
NXP Semiconductors BT151-650R
SCR, 12 A, 15mA, 650 V, SOT78 Characteristics
Table 6. Characteristics
Static characteristics
IGT gate trigger current VD =12V; Tj =25 °C; IT= 100 mA; see
Figure 8 15 mA latching current VD =12V; Tj =25 °C; see Figure 9 -10 40 mA holding current VD =12V; Tj =25 °C; see Figure 10 -7 20 mA on-state voltage IT =23A; Tj=25 °C; see Figure 11 - 1.4 1.75 V
VGT gate trigger voltage IT= 100 mA; VD =12V; Tj=25 °C; see
Figure 12
-0.6 1.5 V= 100 mA; VD =650 V; Tj= 125°C 0.25 0.4 - V off-state current VD =650 V; Tj= 125°C - 0.1 0.5 mA reverse current VR =650 V; Tj= 125°C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM =435 V; Tj= 125 °C; exponential
waveform; gate open circuit 130 - V/µs
VDM =435 V; Tj =125 °C; RGK= 100Ω;
exponential waveform; see Figure 7
200 1000 - V/µs
tgt gate-controlled turn-on
time
ITM =40A; VD= 650 V; IG= 100 mA;
dIG/dt=5 A/µs; Tj =25°C - µs commutated turn-off
time
VDM =435 V; Tj =125 °C; ITM =20A; =25V; (dIT/dt)M =30 A/µs;
dVD/dt=50 V/µs; RGK= 100Ω
-70 - µs

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