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BT151-1000RT |BT1511000RTPHIN/a3000avaiSCR
BT151-1000RT |BT1511000RTNXPN/a50avaiSCR


BT151-1000RT ,SCRApplicationsCapacitive Discharge Ignition (CDI)•• Crowbar protectionInrush protection•• Motor contr ..
BT151-1000RT ,SCRFeatures and benefitsHigh junction operating temperature capability•• High thermal cycling performa ..
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BT151-1000RT
SCR
TO-220AB BT151-1000RT
SCR 13 March 2014 Product data sheet General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high bidirectional blocking voltagecapability, high junction temperature capability and high thermal cycling performance. Features and benefits High junction operating temperature capability• High thermal cycling performance• Planar passivated for voltage ruggedness and reliability• Very high bidirectional blocking voltage capability Applications Capacitive Discharge Ignition (CDI)• Crowbar protection• Inrush protection• Motor control• Voltage regulation Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 1000 V
VRRM repetitive peak reverse
voltage - 1000 V
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 - 120 A junction temperature - - 150 °C
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 134 °C; Fig. 1;
Fig. 2; Fig. 3 - 12 A
Static characteristics 2 15 mA
NXP Semiconductors BT151-1000RT
SCR Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol K cathode A anode G gate A mounting base; connected toanode2
TO-220AB (SOT78)
sym037 K Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT151-1000RT TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 1000 V
VRRM repetitive peak reverse voltage - 1000 V
IT(AV) average on-state current half sine wave; Tmb ≤ 134 °C - 7.5 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 134 °C; Fig. 1;
Fig. 2; Fig. 3 12 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5 120 AITSM non-repetitive peak on-statecurrent
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms 132 A2t I2 t for fusing tp = 10 ms; SIN - 72 A2s 50 A/µs - 2 A
NXP Semiconductors BT151-1000RT
SCR
Symbol Parameter Conditions Min Max Unit
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 150 °C
003aaf777-2 10-1 1 10surge duration(s)
IT(RMS)
(A)
f = 50 Hz; Tmb = 134 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Tmb (°C)-50 1501000 50
003aab828
IT(RMS)(A)
134 °C
Fig. 2. RMS on-state current as a function of mountingbase temperature; maximum values
003aaf778 8
Ptot
(W) a=1.57
Tmb(max)(oC)
conductionangle(degrees)
formfactora
NXP Semiconductors BT151-1000RT
SCR
003aad203
ITSM(A)
number of cycles1 10310210 Tj(init) = 25 °C max ITSM
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aad204
10
102
103-5 10-4 10-3 10-2tp(s)
ITSM
(A)
Tj(init) = 25 °C max ITSM
(1)
tp ≤ 10 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values Max Unit 1.3 K/W - K/W
NXP Semiconductors BT151-1000RT
SCR
003aaj936
Zth(j-mb)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3δ=
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 2 15 mA latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - 10 40 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 7 20 mA on-state voltage IT = 23 A; Tj = 25 °C; Fig. 10 - 1.4 1.75 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.6 1 VVGT gate trigger voltage
VD = 1000 V; IT = 0.1 A; Tj = 150 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 1000 V; Tj = 150 °C - 0.5 2.5 mA reverse current VR = 1000 V; Tj = 150 °C - 0.5 2.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 670 V; Tj = 150 °C; (VDM = 67% 300 - V/µs - µs - µs
NXP Semiconductors BT151-1000RT
SCR
Tj (°C)-50 1501000 50
003aab824
IGT
IGT(25°C)
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj (°C)-50 1501000 50
003aab825
IL(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
Tj (°C)-50 1501000 50
003aab826
IH(25°C)
Fig. 9. Normalized holding current as a function of
003aaf776 1 2VT(V)
(A)
(1)
(2)
(3)
Vo = 0.825 V; Rs = 0.41 Ω(1) Tj = 150°C; typical values
(2) Tj = 150°C; maximum values(3) Tj = 25°C; maximum values
Fig. 10. On-state current as a function of on-statevoltage
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