BT138X600E Fast Delivery |IC PHOENIX CO.,LIMITED

BT138X600E ,4Q TriacApplications• General purpose motor controlGeneral purpose switching•4. Quick reference dataTable 1 ..
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BT138X600E
4Q Triac
TO-220F BT138X-600E
4Q Triac 29 August 2013 Product data sheet General description
Planar passivated sensitive gate four quadrant triac in a SOT186A (TO-220F) "full pack"plastic package intended for use in applications requiring high bidirectional transient andblocking voltage capability and high thermal cycling performance. Typical applicationsinclude motor control, industrial and domestic lighting, heating and static switching. Thissensitive gate "series E" triac is intended for gate triggering by low power drivers andmicrocontrollers. Features and benefits Direct triggering from low power drivers and logic ICs• High blocking voltage capability• Isolated package• Planar passivated for voltage ruggedness and reliability• Sensitive gate• Triggering in all four quadrants Applications General purpose motor control• General purpose switching Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 600 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 95 A junction temperature - - 125 °C
IT(RMS) RMS on-state current full sine wave; Th ≤ 56 °C; Fig. 1; Fig. 2;
Fig. 3 - 12 A
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; 2.5 10 mA
NXP Semiconductors BT138X-600E
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 4 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 5 10 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 11 25 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit 150 - V/µs Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate n.c. mounting base; isolated21
TO-220F (SOT186A)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT138X-600E TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A
NXP Semiconductors BT138X-600E
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 56 °C; Fig. 1; Fig. 2;
Fig. 3 12 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 95 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 105 A2t I2 t for fusing tp = 10 ms; sine-wave pulse - 45 A2s
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT138X-600E
4Q Triac
Th (°C)-50 1501000 50
003aaj939
IT(RMS)
(A)
56 °C
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
surge duration (s)10-2 10110-1
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IT(RMS)
(A)
f = 50 Hz; Th = 56 °C
Fig. 2. RMS on-state current as a function of surgeduration; maximum values
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Ptot
(W)
IT(RMS) (A)0 15126 93
conductionangle(degrees)
formfactora60901201802.82.21.91.57
Th(max)(°C)
α = 180°
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors BT138X-600E
4Q Triac
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100 10 102 103
number of cycles (n)
ITSM
(A)
ITSM
Tj(init) = 25°C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
003aaj945
10
102
103-5 10-4 10-3 10-2 10-1
tp (s)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
(1)
(2)
tp ≤ 20 ms
(1) dIT/dt limit
NXP Semiconductors BT138X-600E
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full or half cycle; with heatsink
compound; Fig. 6 - 4 K/WRth(j-h) thermal resistance
from junction toheatsink full or half cycle; without heatsink
compound; Fig. 6 - 5.5 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 55 - K/W
003aaj342
Zth(j-h)
(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
(1)(2)
(3)(4)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration Max Unit 2500 V - pF
NXP Semiconductors BT138X-600E
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 4 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 5 10 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 11 25 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 - 30 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 - 40 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 - 30 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 - 40 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 30 mA on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 600 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit 150 - V/µs
tgt gate-controlled turn-ontime ITM = 16 A; VD = 600 V; IG = 0.2 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT138X600E		N/a	833	avai	4Q Triac