BT138X-600-BT138X-600F-BT138X800-BT138X-800-BT138X-800F Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B29 > BT138X-600-BT138X-600F-BT138X800-BT138X-800-BT138X-800F,4Q Triac

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BT138X-600 \|BT138X600	PHILIPS	N/a	200	avai	4Q Triac
BT138X-600F \|BT138X600F	PHILIPS	N/a	171	avai	Triacs
BT138X800		N/a	153	avai	Triacs
BT138X-800 \|BT138X800	PHILIPS	N/a	4	avai	Triacs
BT138X-800F \|BT138X800F	PHLIPS	N/a	1130	avai	4Q Triac

BT138X-800F ,4Q Triacapplications include motor V Repetitive peak off-state 600 800 VDRMcontrol, industrial and domestic ..
BT139-500 ,TriacsBT139-6004Q Triac27 September 2013 Product data sheet1.
BT139-500G ,TriacsLimiting valuesTable 4.
BT139-600 ,4Q TriacApplicationsGeneral purpose motor controls•• General purpose switching4. Quick reference dataTable ..
BT139-600. ,4Q Triacapplications requiring high bidirectional transient and blocking voltagecapability and high thermal ..
BT139-600E ,4Q TriacPIN CONFIGURATION SYMBOLPIN DESCRIPTIONtab1 main terminal 1T2 T12 main terminal 23 gateG123tab main ..
BZV55-C5V6 ,ZENER DIODESThermal characteristics Table 6.
BZV55C62 ,Voltage regulator diodesFeatures and benefits  Non-repetitive peak reverse power  Wide working voltage range: dissipation ..
BZV55-C62 ,Voltage regulator diodesFEATURES DESCRIPTION• Total power dissipation: Low-power voltage regulator diodes in small hermetic ..
BZV55-C62 ,Voltage regulator diodesLimiting values Table 5.
BZV55-C68 ,Voltage regulator diodes BZV55 seriesVoltage regulator diodesRev. 5 — 26 January 2011 Product data sheet1. Product profile1 ..
BZV55-C6V2 ,Voltage regulator diodesApplications General regulation functions1.4 Quick reference data Table 1. Quick reference dataSym ..

BT138X-600-BT138X-600F-BT138X800-BT138X-800-BT138X-800F
Triacs
Philips Semiconductors Product specification
Triacs BT138X series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated triacsina full pack plastic SYMBOL PARAMETER MAX. MAX. UNIT
envelope, intended for use inapplications requiring high bidirectional BT138X- 600 800
transient and blocking voltage capability BT138X- 600F 800F
and high thermal cycling performance.Typical applications include motor VDRM Repetitive peak off-state 600 800 V
control, industrial and domestic lighting, voltages
heating and static switching. IT(RMS) RMS on-state current 12 12 AITSM Non-repetitive peak on-state 95 95 A
current
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Ths ≤ 56 ˚C - 12 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A2 tI2 t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
case
Philips Semiconductors Product specification
Triacs BT138X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pFheatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138X- ... ...F
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 mA
T2+ G- - 8 35 25 mA
T2- G- - 10 35 25 mA
T2- G+ - 22 70 70 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 40 40 mA
T2+ G- - 20 60 60 mA
T2- G- - 8 40 40 mA
T2- G+ - 10 60 60 mA Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 mA On-state voltage IT = 15 A - 1.4 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
Philips Semiconductors Product specification
Triacs BT138X series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138X- ... ...F
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 250 - V/μs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 20 - V/μs
commutating voltage IT(RMS) = 12 A;
dIcom/dt = 5.4 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max);- - 2 - μs
time IG = 0.1 A; dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Triacs BT138X series
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 56˚C.
Fig.6. Normalised gate trigger voltage 5 10 150
IT(RMS) / A
Ptot / W Ths(max) / C
-50 0 50 100 1500
Ths / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs BT138X series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-hs (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 50 100 1501
Tj / C
dV/dt (V/us)
Philips Semiconductors Product specification
Triacs BT138X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)
1.3

TEL:86-533-2716050 FAX:86-533-2716790