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BT138B-600 |BT138B600PHN/a178avaiTriacs
BT138B-600 |BT138B600PHILIPSN/a800avaiTriacs
BT138B-600F |BT138B600FPHILIPSN/a450avai4Q Triac


BT138B-600 ,Triacsapplications include V Repetitive peak off-state 600 VDRMmotor control, industrial and domestic vol ..
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BT138B-600E ,Triacs sensitive gate
BT138B-600F ,4Q TriacGENERAL DESCRIPTION QUICK REFERENCE DATAPassivated triacs in a plastic envelope SYMBOL PARA ..
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BT138B-600-BT138B-600F
Triacs
Philips Semiconductors Product specification
Triacs BT138B series
GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacsina plastic envelope SYMBOL PARAMETER MAX. UNIT
suitablefor surface mounting, intended foruse in applications requiring high BT138B- 600
bidirectional transient and blocking voltage BT138B- 600F
capability and high thermal cycling BT138B- 600Gperformance. Typical applications include VDRM Repetitive peak off-state 600 V
motor control, industrial and domestic voltages
lighting, heating and static switching. IT(RMS) RMS on-state current 12 AITSM Non-repetitive peak on-state 95 A
current
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
main terminal 1 main terminal 2 gate main terminal 2
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDRM Repetitive peak off-state - 6001 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 12 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A2 tI2 t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2
Philips Semiconductors Product specification
Triacs
BT138B series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Rth j-a Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138B- ... ...F ...G

IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 10 35 25 50 mA
T2- G+ - 22 70 70 100 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 40 40 60 mA
T2+ G- - 20 60 60 90 mA
T2- G- - 8 40 40 60 mA
T2- G+ - 10 60 60 90 mA Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA On-state voltage IT = 15 A - 1.4 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138B- ... ...F ...G

dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/μs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/μs
commutating voltage IT(RMS) = 12 A;
dIcom/dt = 5.4 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max);- - - 2 - μs
time IG = 0.1 A; dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Triacs
BT138B series
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
Fig.6. Normalised gate trigger voltage 5 10 150
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
ITSM / A
0.01 0.1 1 100
surge duration / s
IT(RMS) / A 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs
BT138B series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 50 100 1501
Tj / C
dV/dt (V/us)
Philips Semiconductors Product specification
Triacs
BT138B series
MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS

Dimensions in mm
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes

1. Plastic meets UL94 V0 at 1/8".
4.5 max
10.3 max
3.8
Philips Semiconductors Product specification
Triacs
BT138B series
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS
2 STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information

Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
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