BT138-600G Fast Delivery |IC PHOENIX CO.,LIMITED

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BT138-600G
4Q Triac
TO-220AB BT138-600G
4Q Triac 30 August 2013 Product data sheet General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intendedfor use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motorcontrol, industrial and domestic lighting, heating and static switching. Features and benefits High blocking voltage capability• Least sensitive gate for highest noise immunity• Planar passivated for voltage ruggedness and reliability• Triggering in all four quadrants Applications General purpose motor control• General purpose switching Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 600 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 95 A junction temperature - - 125 °C
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3 - 12 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 5 50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 8 50 mA
IGT gate trigger current 10 50 mA
NXP Semiconductors BT138-600G
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 22 100 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200 250 - V/µs Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate T2 mounting base; mainterminal 22
TO-220AB (SOT78)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT138-600G TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors BT138-600G
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3 12 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 95 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 105 A2t I2 t for fusing tp = 10 ms; sine-wave pulse - 45 A2s
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT138-600G
4Q Triac
Tmb (°C)-50 1501000 50
003aaj938
IT(RMS)
(A)
99 °C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
surge duration (s)10-2 10110-1
003aaj940
IT(RMS)
(A)
f = 50 Hz; Tmb = 99 °C
Fig. 2. RMS on-state current as a function of surgeduration; maximum values
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Ptot
(W)
IT(RMS) (A)0 15126 93
conductionangle(degrees)
formfactora60901201802.82.21.91.57
Tmb(max)(°C)
α = 180°
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors BT138-600G
4Q Triac
003aaj944
100 10 102 103
number of cycles (n)
ITSM
(A)
ITSM
Tj(init) = 25°C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
003aaj945
10
102
103-5 10-4 10-3 10-2 10-1
tp (s)
ITSM
(A)
ITSM
Tj(init) = 25 °C max
(1)
(2)
tp ≤ 20 ms
(1) dIT/dt limit
NXP Semiconductors BT138-600G
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 1.5 K/WRth(j-mb) thermal resistance
from junction tomounting base half cycle; Fig. 6 - - 2 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 60 - K/W
003aaj343
Zth(j-mb)(K/W)
tp (s)10-5 1 1010-110-210-4 10-3
(1)
(2)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
NXP Semiconductors BT138-600G
4Q Triac Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 5 50 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 8 50 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 10 50 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 22 100 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 7 60 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 20 90 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 8 60 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 10 90 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 6 60 mA on-state voltage IT = 15 A; Tj = 25 °C; Fig. 10 - 1.4 1.65 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
200 250 - V/µs
tgt gate-controlled turn-ontime ITM = 16 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT138-600G \|BT138600G	NXP	N/a	2000	avai	4Q Triac