BT138-600E ,Triacs sensitive gatePIN CONFIGURATION SYMBOLPIN DESCRIPTIONtab1 main terminal 1T2 T12 main terminal 23 gateG123tab main ..
BT138-600F ,TriacsPIN CONFIGURATION SYMBOLPIN DESCRIPTIONtab1 main terminal 1T2 T12 main terminal 23 gateG123tab main ..
BT138-600G ,4Q TriacGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated triacs in a plastic SYMBOL PARAMETER MAX. ..
BT138-600G ,4Q TriacApplications• General purpose motor controlGeneral purpose switching•4. Quick reference dataTable 1 ..
BT138-800 ,TriacsGENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated triacs in a plastic SYMBOL PARAMETER MAX. ..
BT138-800E ,Triacs sensitive gatePhilips Semiconductors Product specification Triacs BT138 series E sensitive gate
BZV55C43 ,ZENER DIODESLimiting values Table 5.
BZV55-C43 ,ZENER DIODESLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BZV55-C43 ,ZENER DIODESGeneral descriptionLow-power voltage regulator diodes in small hermetically sealed glass SOD80C Sur ..
BZV55-C47 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in small hermetically sealed glass SOD80C Sur ..
BZV55-C4V3 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in small hermetically sealed glass SOD80C Sur ..
BZV55C4V7 ,Voltage regulator diodesFEATURES DESCRIPTION• Total power dissipation: Low-power voltage regulator diodes in small hermetic ..
BT138-600E-BT138-800E
Triacs sensitive gate
Philips Semiconductors Product specification
Triacs BT138 series E
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATAGlass passivated, sensitive gate
SYMBOL PARAMETER MAX. MAX. MAX. UNITtriacsina plastic envelope, intendedfor use in general purpose
BT138- 500E 600E 800Ebidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V
control applications, where high voltagessensitivity is required in all four I T(RMS) RMS on-state current 12 12 12 A
quadrants. ITSM Non-repetitive peak on-state 95 95 95 A
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
tab main terminal 2
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 12 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A2 tI2 t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2123
tab
Philips Semiconductors Product specification
Triacs BT138 series E
sensitive gate
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITRth j-mb Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITIGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 3.2 30 mA
T2+ G- - 16 40 mA
T2- G- - 4.0 30 mA
T2- G+ - 5.5 40 mA Holding current VD = 12 V; IGT = 0.1 A - 4.0 30 mA On-state voltage IT = 15 A - 1.4 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITdVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/μsoff-state voltage exponential waveform; gate open circuit
tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs
Philips Semiconductors Product specification
Triacs BT138 series E
sensitive gate
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
Fig.6. Normalised gate trigger voltage 5 10 150
IT(RMS) / A
Ptot / W Tmb(max) / C
-50 0 50 100 1500
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms10
T / s
0.01 0.1 1 100
surge duration / s 10 100 10000
Number of cycles at 50Hz
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs BT138 series E
sensitive gate
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 2 2.5 30
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 50 100 1501
Tj / C
dVD/dt (V/us)
Philips Semiconductors Product specification
Triacs BT138 series E
sensitive gate
MECHANICAL DATADimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max3,0 max
not tinned
2,4
0,6
4,5
max
15,8max
1,3
2,54 2,54
13,5min
Philips Semiconductors Product specification
Triacs BT138 series E
sensitive gate
DEFINITIONS
Data sheet statusObjective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application informationWhere application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
