BT136X600E-BT136X-600E Fast Delivery |IC PHOENIX CO.,LIMITED

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BT136X600E-BT136X-600E
4Q Triac
TO-220F BT136X-600E
4Q Triac 23 October 2013 Product data sheet General description
Planar passivated sensitive gate four quadrant triac in a SOT186A "full pack" plasticpackage intended for use in general purpose bidirectional switching and phase controlapplications. This sensitive gate "series E" triac is intended to be interfaced directly tomicrocontrollers, logic integrated circuits and other low power gate trigger circuits. Features and benefits Direct triggering from low power drivers and logic ICs• High blocking voltage capability• Isolated package• Low holding current for small load currents and lowest EMI at commutation• Planar passivated for voltage ruggedness and reliability• Sensitive gate• Triggering in all four quadrants Applications General purpose motor control• General purpose switching Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state voltage - - 600 V
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 25 A
IT(RMS) RMS on-state current full sine wave; Th ≤ 92 °C; Fig. 1; Fig. 2;
Fig. 3 - 4 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 10 mAIGT gate trigger current 4 10 mA
NXP Semiconductors BT136X-600E
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 5 10 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 11 25 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate n.c. mounting base; isolated21
TO-220F (SOT186A)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT136X-600E TO-220F plastic single-ended package; isolated heatsink mounted; 1mounting hole; 3-lead TO-220 "full pack" SOT186A
BT136X-600E/DG TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
NXP Semiconductors BT136X-600E
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 92 °C; Fig. 1; Fig. 2;
Fig. 3 4 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 25 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 27 A2t I2 t for fusing tp = 10 ms; SIN - 3.1 A2s
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT136X-600E
4Q Triac
aaa-009685IT(RMS)
(A)
surge duration (s)10-2 10110-1
f = 50 Hz; Th = 92 °C
Fig. 1. RMS on-state current as a function of surgeduration; maximum values
Th (°C)-50 1501000 50
aaa-009556
IT(RMS)(A)
Fig. 2. RMS on-state current as a function of heatsinktemperature; maximum values
003aae827
Ptot
(W)
IT(RMS) (A)0 542 31
conductionangle(degrees)
formfactora60901201802.82.21.91.57 α= 180°
120°
90°
60°
30°
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors BT136X-600E
4Q Triac
003aae829
tp (s)10-5 10-110-210-4 10-3
ITSM(A)
ITSM
Tj(init) = 25 °C max
(1)
(2)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
003aae831ITSM(A)
number of cycles1 10410310 102
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
NXP Semiconductors BT136X-600E
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full or half cycle; with heatsink
compound; Fig. 6 - 5.5 K/WRth(j-h) thermal resistance
from junction toheatsink full or half cycle; without heatsink
compound; Fig. 6 - 7.2 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 55 - K/W
aaa-009605
tp (s)10-5 1 1010-110-210-4 10-3
Zth(j-h)
(K/W)
(2)
(4)
(3)
(1) Unidirectional (half cycle) without heatsink compound
(2) Bidirectional (full cycle) with heatsink compound(3) Unidirectional (half cycle) with heatsink compound
(4) Bidirectional (full cycle) without heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width Max Unit 2500 V - pF
NXP Semiconductors BT136X-600E
4Q Triac
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 4 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 5 10 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 11 25 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 3 15 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 10 20 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 2.5 15 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 4 20 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit 50 - V/µs
tgt gate-controlled turn-ontime ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT136X600E		N/a	730	avai	4Q Triac
BT136X-600E \|BT136X600E	NXP	N/a	3000	avai	4Q Triac