BT136S-800E Fast Delivery |IC PHOENIX CO.,LIMITED

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BT136S-800E ,4Q TriacApplications• General purpose motor controlGeneral purpose switching•4. Quick reference dataTable 1 ..
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BT136S-800E
4Q Triac
A BT136S-800E4Q Triac 30 September 2013 Product data sheet General description
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface- mountable plastic package intended for use in general purpose bidirectional switchingand phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gatetrigger circuits. Features and benefits Direct triggering from low power drivers and logic ICs• High blocking voltage capability• Low holding current for low current loads and lowest EMI at commutation• Planar passivated for voltage ruggedness and reliability• Sensitive gate• Surface mountable package• Triggering in all four quadrants Applications General purpose motor control• General purpose switching Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 800 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 25 A
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3 - 4 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 10 mAIGT gate trigger current 4 10 mA
NXP Semiconductors BT136S-800E
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 5 10 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 11 25 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate T2 mounting base; mainterminal 2 3
DPAK (SOT428)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT136S-800E DPAK plastic single-ended surface-mounted package (DPAK); 3 leads(one lead cropped) SOT428
NXP Semiconductors BT136S-800E
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3 4 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 25 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 27 A2t I2t for fusing tp = 10 ms; SIN - 3.1 A2s
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT136S-800E
4Q Triac
Tmb(°C)-50 1501000 50
003aae828
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
003aae830IT(RMS)
(A)
surge duration(s)10-2 10110-1
f = 50 Hz
Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
003aae827
Ptot
(W)
IT(RMS)(A)0 542 31
conductionangle(degrees)
formfactora60901201802.82.21.91.57 α=180°
120°
90°
60°
30°
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
NXP Semiconductors BT136S-800E
4Q Triac
003aae831ITSM
(A)
numberof cycles1 10410310 102
ITSM
Tj(init)=25°C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
003aae829(s)10-5 10-110-210-4 10-3
ITSM
(A)
ITSM
Tj(init) =25°C max
(1)
(2)
tp ≤ 20 ms
(1) dIT/dt limit
NXP Semiconductors BT136S-800E
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
half cycle; Fig. 6 - - 3.7 K/WRth(j-mb) thermal resistance
from junction tomounting base full cycle; Fig. 6 - - 3 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air; printed circuit board (FR4)mounted; standard footprint, single-
sided copper, tin-plated 75 - K/W
003aae836(s)10-5 1 1010-110-210-4 10-3
Zth(j-mb)
(K/W)
bidirectional
unidirectional
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors BT136S-800E
4Q Triac Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2.5 10 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 4 10 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 5 10 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 11 25 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 3 15 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 10 20 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 2.5 15 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 4 20 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.2 15 mA on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit 50 - V/µs
tgt gate-controlled turn-ontime ITM = 6 A; VD = 800 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT136S-800E \|BT136S800E	NXP原厂	N/a	32090	avai	4Q Triac
BT136S-800E \|BT136S800E	NXP	N/a	22250	avai	4Q Triac