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Partno	Mfg	Dc	Qty	Available	Descript
BT134W-600 \|BT134W600	PHI	N/a	95	avai	Triacs
BT134W-800 \|BT134W800	NXP	N/a	2000	avai	Triacs
BT134W-800 \|BT134W800	飞利浦	N/a	19680	avai	Triacs
BT134W-800 \|BT134W800	PHILIPS	N/a	563	avai	Triacs

BT134W-800 ,Triacsapplications requiring high BT134W- 500F 600F 800Fbidirectional transient and blocking BT134W- 500G ..
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BZV55B6V2 ,Voltage regulator diodesGeneral descriptionLow-power voltage regulator diodes in small hermetically sealed glass SOD80C Sur ..
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BT134W-600-BT134W-800
Triacs
Philips Semiconductors Product specification
Triacs BT134W series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacsina plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surfacemounting, intended for use in BT134W- 500 600 800
applications requiring high BT134W- 500F 600F 800F
bidirectional transient and blocking BT134W- 500G 600G 800Gvoltage capability and high thermal VDRM Repetitive peak off-state 500 600 800 V
cycling performance. Typical voltages
applications include motor control, IT(RMS) RMS on-state current 1 1 1 Aindustrial and domestic lighting, ITSM Non-repetitive peak on-state 10 10 10 A
heating and static switching. current
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION main terminal 1 main terminal 2 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 10 A
t = 16.7 ms - 11 A2 tI2 t for fusing t = 10 ms - 0.5 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C Operating junction - 125 ˚C
temperatureT2
Philips Semiconductors Product specification
Triacs BT134W series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-sp Thermal resistance full or half cycle - - 15 K/W
junction to solder point
Rth j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W
STATIC CHARACTERISTICSj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134W- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA On-state voltage IT = 2 A - 1.2 1.50 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134W- ... ...F ...G
dVD/dt Critical rate of rise of VDM =67% VDRM(max); 100 50 200 250 - V/μs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/μs
commutating voltage IT(RMS) = 1 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 1.5 A; - - - 2 - μs
time VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/μs;
Philips Semiconductors Product specification
Triacs BT134W series
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
Fig.4. Maximum permissible rms current IT(RMS) ,
versus solder point temperature Tsp.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tsp ≤ 108˚C.
Fig.6. Normalised gate trigger voltage 0.2 0.4 0.6 0.8 1 1.20
IT(RMS) / A
Ptot / W Tsp(max) / C
-50 0 50 100 1500
Tsp / C
IT(RMS) / A
T / s
ITSM / A
10us 100us 1ms 10ms 100ms
0.01 0.1 1 100
surge duration / s 10 100 10000
Number of cycles at 50Hz
ITSM / A
-50 0 50 100 1500.4
Tj / C
VGT(Tj)
VGT(25 C)
Philips Semiconductors Product specification
Triacs BT134W series
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-sp, versus
pulse width tp.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
-50 0 50 100 1500
Tj / C
IGT(Tj)
IGT(25 C) 0.5 1 1.5 20
VT / V
IT / A
-50 0 50 100 1500
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Zth j-sp (K/W)100
-50 0 50 100 1500
Tj / C
IH(Tj)
IH(25C) 50 100 1501
Tj / C
dVcom/dt (V/us)
Philips Semiconductors Product specification
Triacs BT134W series
MOUNTING INSTRUCTIONS
Dimensions in mm.
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 μm thick).
min
min
min
Philips Semiconductors Product specification
Triacs BT134W series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
Fig.15. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".1.05
max
0.32

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