BT134-600D Fast Delivery |IC PHOENIX CO.,LIMITED

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BT134-600D
4Q Triac
TO-220AB BT134-600D
4Q Triac 21 November 2013 Product data sheet General description
Planar passivated very sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applicationswhere high sensitivity is required in all four quadrants. This "series D" triac is intendedto be interfaced directly to microcontrollers, logic integrated circuits and other low powergate trigger circuits. Features and benefits Compact package• Direct interfacing to logic level ICs• Direct interfacing to low power gate drive circuits• High blocking voltage capability• Low holding current for low current loads and lowest EMI at commutation• Planar passivated for voltage ruggedness and reliability• Triggering in all four quadrants• Very sensitive gate Applications General purpose low power motor control• Home appliances• Industrial process control Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 600 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 25 A
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3 - 4 A
Static characteristics 2 5 mA
NXP Semiconductors BT134-600D
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 2.5 5 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 2.5 5 mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 5 10 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.2 10 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate T2 mounting base; mainterminal 221
SIP3 (SOT82)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT134-600D SIP3 plastic single-ended package; 3 leads (in-line) SOT82
NXP Semiconductors BT134-600D
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3 4 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 25 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 27 A2t I2t for fusing tp = 10 ms; SIN - 3.1 A2s
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT134-600D
4Q Triac
Tmb(°C)
-50 1501000 50
003aae828
IT(RMS)
(A)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
003aae830
IT(RMS)
(A)
surge duration (s)
10-2 10110-1
f = 50 Hz Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
003aae827
Ptot
(W)
IT(RMS) (A)0 542 31
conduction
angle
(degrees)
form
factor
1.57= 180°
120°
90°
60°
30°
α = conduction angle a = form factor = IT(RMS) / IT(AV)
NXP Semiconductors BT134-600D
4Q Triac
003aae831
ITSM
(A)
number of cycles 10410310 102
ITSM
Tj(init) = 25 °C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aae829
tp (s)10-5 10-110-210-4 10-3
ITSM
(A)
ITSM
Tj(init) = 25 °C max
(1)
(2)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
NXP Semiconductors BT134-600D
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
half cycle; Fig. 6 - - 3.7 K/WRth(j-mb) thermal resistance
from junction tomounting base full cycle; Fig. 6 - - 3 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air - 100 - K/W
003aae836(s)
10-5 1 1010-110-210-4 10-3
Zth(j-mb)
(K/W)
bidirectional
unidirectional
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors BT134-600D
4Q Triac Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 2 5 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 2.5 5 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 2.5 5 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 5 10 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 1.6 10 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 4.5 15 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 1.2 10 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 2.2 15 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.2 10 mA on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.4 1.7 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25 0.4 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform 5 - V/µs
tgt gate-controlled turn-ontime ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT134-600D \|BT134600D	NXP	N/a	12000	avai	4Q Triac