BT131W-600 Fast Delivery |IC PHOENIX CO.,LIMITED

BT131W-600 ,4Q TriacApplications• General purpose low power motor controlGeneral purpose switching and phase control•4. ..
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BT131W-600
4Q Triac
BT131W-6004Q Triac 21 November 2013 Product data sheet General description
Planar passivated four quadrant triac in a SOT223 surface-mountable plastic packageintended for use in applications requiring high bidirectional transient and blocking voltagecapability and high thermal cycling performance. Features and benefits High blocking voltage capability• Planar passivated for voltage ruggedness and reliability• Surface-mountable package• Triggering in all four quadrants• Very sensitive gate Applications General purpose low power motor control• General purpose switching and phase control Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage - 600 V
ITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 - 12.5 A
IT(RMS) RMS on-state current full sine wave; Tsp ≤ 110 °C; Fig. 1;
Fig. 2; Fig. 3 - 1 A
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+; 0.4 3 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 1.3 3 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-; 1.4 3 mA
NXP Semiconductors BT131W-600
4Q Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 3.8 7 mA Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol T1 main terminal 1 T2 main terminal 2 G gate T2 mainterminal 2 32
SC-73 (SOT223)
sym051 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT131W-600 SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
NXP Semiconductors BT131W-600
4Q Triac Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tsp ≤ 110 °C; Fig. 1;
Fig. 2; Fig. 3 1 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5 12.5 AITSM non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms 13.8 A2t I2t for fusing tp = 10 ms; SIN - 0.78 A2s
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+ 50 A/µs
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G- 50 A/µs
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G- 50 A/µs
dIT/dt rate of rise of on-state current
IT = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+ 10 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C junction temperature - 125 °C
NXP Semiconductors BT131W-600
4Q Triac
aaa- 010140
IT(RMS)
(A)
surge duration (s)
10-2 10110-1
f = 50 Hz; Tsp = 110 °C
Fig. 1. RMS on-state current as a function of surgeduration; maximum values
aaa- 010141
-50 0 50 100 150
Tsp(°C)
IT(RMS)
(A)
110°C
Fig. 2. RMS on-state current as a function of solderpoint temperature; maximum values
aaa-010139
1.2 0.2 0.4 0.6 0.8 1 1.2IT(RMS) (A)
Ptot
(W)
Tsp(max)
(°C)
119°°°
120°
# = 180°#
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors BT131W-600
4Q Triac
003aab041
ITSM
(A) 10310210
ITSM=25°C max
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues
003aab040(s)
10-5 10-110-210-4 10-3
ITSM
(A)
(1)
(2)
ITSM=25°C max
tp ≤ 20 ms
(1) dIT/dt limit
NXP Semiconductors BT131W-600
4Q Triac Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance
from junction to solderpoint
full cycle; Fig. 6 - - 15 K/W
full cycle; for minimum footprint - 156 - K/WRth(j-a) thermal resistancefrom junction to
ambient full cycle; for pad area - 70 - K/W
003aak513
Zth(j-sp)
(K/W)
tp (s)-5 1 1010-110-210-4 10-3
(2)
(1)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width
NXP Semiconductors BT131W-600
4Q Triac Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 0.4 3 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 1.3 3 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 1.4 3 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7 3.8 7 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8 1.2 5 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8 4 8 mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8 1 5 mA latching current
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8 2.5 8 mA holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.3 5 mA on-state voltage IT = 1.4 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11 0.7 1 VVGT gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.2 0.3 - V off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 12 20 - V/µs
dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 125 °C; dIcom/
dt = 0.5 A/ms; IT = 1 A; gate open
circuit - - V/µs
tgt gate-controlled turn-on
time
ITM = 1.5 A; VD = 600 V; IG = 0.1 A; dIG/
dt = 5 A/µs 2 - µs

Partno	Mfg	Dc	Qty	Available	Descript
BT131W-600 \|BT131W600	NXP	N/a	180	avai	4Q Triac