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BST82
N-channel TrenchMOS intermediate level FET
BST82N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000 Product specification DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BST82 in SOT23.
Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
Applications Relay driver High speed line driver Logic level translator.
Pinning information TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol gate (g)
SOT23 N-channel MOSFET source (s) drain (d)
Philips Semiconductors BST82
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to150°C − 100 V drain current (DC) Tsp =25 °C; VGS =5V − 190 mA
Ptot total power dissipation Tsp =25°C − 0.83 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS =5V; ID= 150 mA 5 10 Ω
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 100 V
VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 100 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tsp =25 °C; VGS =5V; Figure2 and3 − 190 mA
Tsp= 100 °C; VGS =5V; Figure2 − 120 mA
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs;
Figure3 0.8 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 0.83 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C − 190 mA
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs − 0.8 A
Philips Semiconductors BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors BST82
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder
point
mountedona metal clad substrate;
Figure4
150 K/W
Rth(j-a) thermal resistance from junction to ambient mountedona printed circuit board;
minimum footprint
350 K/W
Philips Semiconductors BST82
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage =10 μA; VGS =0V =25°C 100 130 − V= −55 °C89 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C1 2 − V= 150°C 0.6 −− V= −55°C −− 3.5 V
IDSS drain-source leakage current VDS=60 V; VGS =0V =25°C − 0.01 1.0 μA= 150°C −− 10 μA
IGSS gate-source leakage current VGS= ±20 V; VDS =0V − 10 100 nA
RDSon drain-source on-state
resistance
VGS =5V; ID= 150 mA;
Figure7 and8 =25°C − 510 Ω= 150°C −− 23 Ω
Dynamic characteristicsgfs forward transconductance VDS =5V; ID= 175 mA;
Figure11 350 − mS
Ciss input capacitance VGS =0V; VDS =10V;=1 MHz; Figure12 25 40 pF
Coss output capacitance − 8.5 15 pF
Crss reverse transfer capacitance − 510 pF
ton turn-on time VDD=50 V; RD= 250Ω;
VGS =10V; RG =50Ω;
RGS =50Ω 310 ns
toff turn-off time − 12 15 ns
Source-drain diodeVSD source-drain (diode forward)
voltage= 300 mA; VGS =0V;
Figure13 0.95 1.5 V
trr reverse recovery time IS= 300 mA;
dIS/dt= −100 A/μs;
VGS =0V; VDS =25V 30 − ns recovered charge − 30 − nC
Philips Semiconductors BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors BST82
N-channel enhancement mode field-effect transistor
