BSS92 ,P-Channel SIPMOS Small-Signal TransistorCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
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BSS92
P-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 92
SIPMOS © Small-Signal Transistor
. P channel
. Enhancement mode
. Logic Level I 2
q szm = -0.8...-2.0 v 3 VPTOM
Pin 1 Pin 2 Pin 3
Type VDs ID RDs(on) Package Marking
BSS 92 -240 V -0.15 A 20 Q TO-92 SS92
Type Ordering Code Tape and Reel Information
BSS 92 Q62702-S497 E6288
BSS 92 Q62702-S633 E6296
BSS 92 Q62702-S502 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS -240 V
Drain-gate voltage VDGR
Rss = 20 kg -240
Gate source voltage VGS i 20
Continuous drain current ID A
TA = 33 ( -o.15
DC drain current, pulsed leuls
TA = 25 ( -0.6
Power dissipation Ptot W
TA = 25 ( 1
Data Sheet 1 05.99
tlniinlmm BSS 92
ec no 09y
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) Rth f 125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)Dss V
VGS = 0 V, ID = -0.25 mA, 7]: 25 ( -240 - -
Gate threshold voltage VGSM
Kss--vbs, ID = -1 mA -0.8 -1.5 -2
Zero gate voltage drain current ’Dss pA
Vros = -240 V, vss = o V, T] = 25°C - -0.1 -1
bbs=-240 V, Kss= 0v, Tj= 125°C - -10 -100
bbs = -60 v, vss = o v, T]- = 25°C - - -0.2
Gate-source leakage current IGss nA
Vss = -20 V, bbs = o v - -10 -100
Drain-Source on-state resistance RDS(on) Q
VGS=-1OV, ID=-O.15A - 10 20
Data Sheet 2 05.99
