BSS92 ,P-Channel SIPMOS Small-Signal TransistorCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BSS92 ,P-Channel SIPMOS Small-Signal Transistor BSS 92 ® SIPMOS Small-Signal Transistor• P channel• Enhancement mode• Logic Level• V = -0 ..
BSS92 ,P-Channel SIPMOS Small-Signal TransistorVP2020L, BSS92Vishay SiliconixP-Channel 200-V (D-S) MOSFETs Part Number V Min (V) r Max ..
BSS92 ,P-Channel SIPMOS Small-Signal Transistor
BSS92 ,P-Channel SIPMOS Small-Signal TransistorS-04279—Rev. E, 16-Jun-0111-3r – Drain-Source On-Resistance ( Ω ) I – Drain Current (mA) I – Drain ..
BSS92 ,P-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -240 - -G ..
BZT52C6V2S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52-C6V2S , 200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-323 PACKAGE
BZT52C6V2S-7-F , SURFACE MOUNT ZENER DIODE
BZT52C6V2T-7 , SURFACE MOUNT ZENER DIODE
BZT52C6V8 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C6V8 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BSS92-VP2020L
P-Channel SIPMOS Small-Signal Transistor
VISHAY
VP2020L, BSS92
P-Chan
Vishay Siliconix
nel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) riosion) Max (Q) Vegan) (V) In (A)
VP2020L -200 20 @ VGS = -<5 v AM to -2.5 -0.12
BSS92 -200 20 © VGS = -10 v Ah8 to -2.8 -0.15
FEATURES BENEFITS APPLICATIONS
o High-Side Switching q Ease in Driving Switches . Drivers: Relays, Solenoids, Lamps,
. Secondary Breakdown Free: -220 V q Full-Voltage Operation Hammers, Displays, Memories,
. Low On-Resistance: 11.5 Q q Low Offset Voltage Transistors, etc.
o Low-PowerNoltage Driven q Easily Driven 1/)foout Buffer . Power Supply, Converters
q Excellent Thermal Stability o No High-Temperature . Motor Control
"Run-Away" o Switches
TO-226AA TO-92-18CD
(TO-92) (TO-18 Lead Form)
s Device Marking s Device Marking
Front View Front Mew
G "S" VP D "S" BS
2020L S92
xxyy xxyy
D "S" = Siliconix Logo G "S" = Siliconix Logo
xxyy= Date Code xxyy= Date Code
Top View Top View
VP2020L BSS92
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol VP2020L BSS92 Unit
Drain-Source Voltage VDS -200 -200
Gate-Source Voltage VGS 120 120 V
TA-- 25°C Ah12 Ah15
Continuous Drain Current (TJ = 150°C) TA-- 100°C b -0.08 -0.09 A
Pulsed Drain Currenta IDM -0.48 -0.6
TA-- 25''C 0.8 1.0
Power Dissipation TA-- 100°C PD 022 J4 W
Thermal Resistance, Junction-to-Ambient RthJA 156 125 °CNV
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
Document Number: 70210 www.vishay.com
S-04279-Rev. E, 16-Jun-01 11-1
VP2020L, BSS92
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VP2020L BSS92
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source V VGS = 0 V, ID = -1 0 WA -220
Breakdown Voltage (BR)DSS VGS = 0 V ID = -250 11A -220 -200 V
Gate-Threshold Voltage VGS(th) Vos = VGS, ID = -1 mA -1 s -0.8 -2.5 -0.8 -2.8
vDs=ov,sz= 120V 110 i100
Gate-Bod Leaka e I nA
y g GSS l TJ= 125°C i50
Vros = 0.8 X V(BR)DSS: VGS = 0 V -1
l TJ=125°C -100
Zero Gate Voltage = - =
Drain Current IDSS VDS 200 V, V63 0 V -60 “A
l TJ= 125°C -200
VDS = -60 V, VGS = 0 V Ah2
On-State Drain Currentb Ime”) VDS = -10 V, VGS = -4.5 V -250 -100 mA
VGs=-10V, ko=-0.1 A 11.5 20
VGs=-4.5V,ID=-0.1 A 15 20
Drain-Source - o
on-Resistancep rDS(on) I TJ - 125 C 28 40 Q
Vss=-45 V, ko---o.05A 15
l T J = 125°C 28
Forward VDs = -10 V, ID = -0.1 A 170 100 ms
Transconductantzp git Vos = -25 V, ID = -0.1 A 170 60
Diode Forward Voltage VSD ls = -02 A, VGS = 0 V -0S -1.2 V
Dynamic
Input Capacitance Ciss 30 70 130
Output Capacitance Coss Vos = ‘2: villi? = 0 V 10 20 30 pF
Reverse Transfer Capacitance Crss 3 10 15
Switchingc
td(on) 6 10
T -O T
urn n 1me tr VDD = -25 V, RL = 250 Q 8 15
ID a -0.1A,VGEN = -10 v 18 30 ns
tis(st) RG = 25 Q
T - ffT
urn O Ime tf 17 25
a. For DESIGN AID ONLY, not subject to production testing. VPDQ20
b. Pulse test: PW s300 us duty cycle s2%.
C. Switching time is essentially independent of operating temperature.
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DocumentNumber: 70210
S-04279-Reu E, 16-Jun-01
VISHAY VP2020L, BSS92
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
-500 -100 w"
-A00 -80 o,,,,?
Vss---10 VGs---AV
iii" 'SIS'''''" a:" p'" I-:','.':',",,'"
Fs" -E v o.,."'' jj: ",,W'"" - .
9 -300 's -,-e'''''',''r, g -60
it -5 V sv,ce''''''' -4.5 v g
----""'" O A
E 200 Aki' _,.,--"'"'' -A V - E -4 I -
O - " 7 g o -3 v
I 'I''" - '?
_a ' w,,,----'""'
-100 -3V - -20 // -2 v -
-'''""
0 -1 -2 -3 -4 -5 0 AM -0.8 -IQ -1l5 -2.0
VDS - Drain-to-Source Voltage (V) Vos - Drain-to-Source Voltage (V)
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
-100 I I 20
Vros = -1 5 V
Ps, 25°C
-80 18
l g 16
E -60 .‘E ll
tg I 8 14 (l I - A) 1 A
O ) a; D - .
E -40 O
O L 12
-20 J = "
10 - -C05 A - -002 'ii'""----
-55''C
0 -1 -2 -3 -4 -5 0 -4 -8 -12 -16 -20
l/ss - Gate-Source Voltage (V) l/ss - Gate-Source Voltage (V)
Normalized On-Resistance
On-Resistance vs. Junction Temperature
25 2.25 l
/ a l/ss = -4.5 v
a V ID = -0.1 A
V 8 2.00 -
' 20 " o5. ow'''''"
73 Vss - "I,.,,-''''' ii' 1.75 r
tn n: A
(D I T7
5 15 10 V 6 93 1 5O /
o - 8 '73 "
'sl.) 5% /
Us) 10 , a 1.25 /''"
E Cl 1.00 /
I 5 "ic,"
J) lg 0.75
0 0.50
0 -50 -100 -150 -200 -250 -50 -l 0 30 70 110 150
Vas - Gate-Source Voltage (V) T J - Junction Temperature (°C)
Document Number: 70210 www.vishay.com
S-04279-Reu. E, 16-Jun-01 11 -3
VP2020L, BSS92
VISHAY
Vishay Siliconi
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
-10.0 120 I
Vss = 0 v
f= 1 MHz
g -1.0 “a 80
0 t 60
.E 8 \
I -0.1 l 40 l
_o o \\ Ciss
20 "%, Coss
-0.01 o rss
O -1.0 -2.0 -3.0 -3.5 O -1 0 -20 -30 -A0 -50
Vss - Gate-to-Source Voltage (V) Vros - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
-12 100
t, Va, = -25 v
lo-- -0.IA Rs=25Q
A -10 Vss=0to -10V
3 v// /
%’ -8 / s'c's':.
8 Vros = -100 v y/' / E
g -6 F? 10
cn l LE
ir. -160 v k-o,
is. -4 t
8 / / J.
J' -2 /
O 0.5 1.0 1.5 2.0 2.5 -10 -100 -1000
Q9 - Total Gate Charge (nC)
Duty Cycle = 0.
Thermal Impedance
Normalized Effective Transient
Single Pulse
ID - Drain Current(A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA)
10 100
11 - Square Wave Pulse Duration (sec)
Notes:
-5 " _
1. Duty Cycle, D = T1
2. Per Unit Base = Rth0A =156°CNV
3. TJM - TA = PDMirtruA(t)
1K 10K
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DocumentNumber: 70210
S-04279-Reu E, 16-Jun-01
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