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BSS88
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 88
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level I 2
q VGSM = 0.8...2.0V 5 VPTOSW
Pin 1 Pin 2 Pin 3
Type VDS ID RDSion) Package Marking
BSS 88 240 V 0.25 A 8 Q TO-92 SS88
Type Ordering Code Tape and Reel Information
BSS 88 C62702-S287 E6288
BSS 88 Q62702-S303 E6296
BSS 88 Q62702-S576 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDs 240 V
Drain-gate voltage VDGR
Rss = 20 kg 240
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current b A
TA = 25 ( 0.25
DC drain current, pulsed IDpulS
TA = 25 ( 1
Power dissipation Ptot W
TA = 25 ( 1
Data Sheet 05.99
tInfinlmn BSS 88
ec n o 09y
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature r, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) Rth f 125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)Dss V
vss = o V, ID = 0.25 mA, 7]: 25°C 240 - -
Gate threshold voltage Vesah)
b(ss=Vbs, b = 1 mA 0.6 0.8 1.2
Zero gate voltage drain current IDSS
bbs=240 V, VGS= 0v, 7] =25 ( - 0.1 1 pA
VDS=240v,vGS=0v,TJ-=125°C - 10 100
VDS=100V,VGS=0V, Tj=25°c - - 100 nA
Gate-source leakage current IGSS nA
Vss=20V,bbs=0V - 10 100
Drain-Source on-state resistance RDS(on) Q
Vss = 4.5 v, ID = 0.25 A - 5 8
Vss=1.8V,lro=14mA - 7 15
Data Sheet 2 05.99
