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Partno	Mfg	Dc	Qty	Available	Descript
BSS84P	INFINEON	N/a	13300	avai	Low Voltage MOSFETs

BSS84P ,Low Voltage MOSFETsFeatureV-60 VDS

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BSS84P
Low Voltage MOSFETs
Final dataBSS 84 P
SIPMOS Small-Signal-TransistorProduct Summary
Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated
Final dataBSS 84 P
Thermal Characteristics
Characteristics
Static Characteristics
Final dataBSS 84 P
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Final dataBSS 84 P
1 Power dissipationtot = f (TA)
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.38 BSS 84 P
tot
2 Drain currentD = f (TA)
parameter: VGS- 10 V
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0.14
-0.18
BSS 84 P
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-3 -10
-2 -10
-1 -10 -10 -10
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-1 10 10 10 10 10
thJA
Final dataBSS 84 P
5 Typ. output characteristicD = f (VDS)
parameter: Tj = 25 °C
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.4
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS; T
10
12
14
16
18
20
22
26 BSS 84 P
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS| 2 x |ID| x RDS(on)max
parameter: T
0.05
0.1
0.15
0.2
0.25
0.3
0.4
8 Typ. forward transconductancefs = f(ID)
parameter: T
0.02
0.04
0.06
0.08
0.1
0.12
0.16
Final dataBSS 84 P
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = -0.17 A, VGS = -10 V
10
12
14
16
18 BSS 84 P
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.4
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-3 -10
-2 -10
-1 -10 -10
BSS 84 P

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