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BSS84AK
50 V, 180 mA P-channel Trench MOSFET
Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1 kV AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
BSS84AK
50 V, 180 mA P-channel Trench MOSFET
Rev. 1 — 23 May 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C ---50 V
VGS gate-source voltage -20 - 20 V drain current VGS =-10 V; Tamb =25°C [1] ---180 mA
Static characteristicsRDSon drain-source on-state
resistance
VGS =-10 V; ID =-100mA; =25°C
-4.5 7.5 Ω
NXP Semiconductors BSS84AK
50 V, 180 mA P-channel Trench MOSFET Pinning information Ordering information Marking[1] % = placeholder for manufacturing site code
Table 2. Pinning information G gate
SOT23 (TO-236AB) source D drain
Table 3. Ordering informationBSS84AK TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesBSS84AK %VS
NXP Semiconductors BSS84AK
50 V, 180 mA P-channel Trench MOSFET Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -50 V
VGS gate-source voltage -20 20 V drain current VGS =-10 V; Tamb =25°C [1]- -180 mA
VGS =-10 V; Tamb= 100°C [1]- -120 mA
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -0.7 A
Ptot total power dissipation Tamb =25°C [2]- 350 mW
[1]- 420 mW
Tsp =25°C - 1140 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1]- -180 mA
ESD maximum ratingVESD electrostatic discharge voltage HBM [3]- 1000 V
NXP Semiconductors BSS84AK
50 V, 180 mA P-channel Trench MOSFET
NXP Semiconductors BSS84AK
50 V, 180 mA P-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from junction to ambient in free air [1]- 310 370 K/W
[2]- 260 300 K/W
Rth(j-sp) thermal resistance from junction to solder point - - 115 K/W
