BSS7728N ,Low Voltage MOSFETsFeatureV 60 VDS• N-ChannelR 5 ΩDS(on)• Enhancement modeI 0.2 AD• Logic LevelSOT-23• dv/dt ratedDrai ..
BSS79C ,NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)CharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 40 - -BSS79C B35 - ..
BSS80C ,PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
BSS80C ,PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
BSS80C ,PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
BSS81 ,NPN Silicon Switching TransistorsCharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 40 - -BSS79C B35 - ..
BZT52C3V6T-7 , SURFACE MOUNT ZENER DIODE
BZT52C3V9 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C3V9S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C43 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C43 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52-C43 , SURFACE MOUNT SILICON ZENER DIODES
BSS7728N
Low Voltage MOSFETs
SIPMOSÒ Small-Signal-TransistorProduct Summary
Feature· N-Channel
· Enhancement mode
· Logic Level
· dv/dt ratedSOT-23
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipationtot = f (TA)
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.38 BSS7728N
tot
2 Drain currentD = f (TA)
parameter: VGS³ 10 V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.22 BSS7728N
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C10 10 10 10 10
BSS7728N
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10 10
thJA
5 Typ. output characteristicD = f (VDS)
parameter: Tj = 25 °C, VGS
0.1
0.2
0.3
0.4
0.5
0.6
0.8
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
10
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.8
8 Typ. forward transconductancefs = f(ID)
parameter: Tj = 25 °C
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.4
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 0.5 A, VGS = 10 V
10
11
12
BSS7728N
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS; ID =26µA
0.8
1.3
1.8
2.8
Vgs(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-3 10
-2 10
-1 10 10
BSS7728N
