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BSS297
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 297
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level 1 2
q VGSM = 0.8...2.0V 5 VPT05548
Pin 1 Pin 2 Pin 3
Type VDS b RDS(on) Package Marking
BSS 297 200 V 0.48 A 2 Q TO-92 SS 297
Type Ordering Code Tape and Reel Information
BSS 297 Q67000-S118 E6288
BSS 297 Q67000-S292 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDs 200 V
Drain-gate voltage VDGR
Rss = 20 kg 200
Gate source voltage VGs i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 25 ( 0.48
DC drain current, pulsed leuls
TA = 25 ( 1.92
Power dissipation Ptot W
TA = 25 ( 1
Data Sheet 05.99
tlniinlmm BSS 297
ec n o 09y
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature li -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) Rth f 125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
Electrical Characteristics, at T, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
Vss = 0 V, ID = 0.25 mA, T, = 25°C 200 - -
Gate threshold voltage Vesah)
kss"bs, ID = 1 mA 0.8 1.4 2
Zero gate voltage drain current loss
VDS=200 V, VGS= OV, Tj = 25''C - 0.1 1 HA
VDS=200V,VGS=OV, Tj=125°c - 8 50
Vros=130V,Vss=0V, Tj=25°c - - 100 nA
Gate-source leakage current IGSS nA
VGS=20V,VDS=0V - 10 100
Drain-Source on-state resistance RDS(on) Q
vss = 10 V, ID = 0.45 A - 0.95 2
vss = 4.5 V, b = 0.45 A - 1.1 3.3
Data Sheet 2 05.99
