BSS295 ,N-Channel SIPMOS Small-Signal TransistorCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
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BSS295 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 50 - -GS D ..
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BSS295
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 295
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level I 2
q VGSM = 0.8...2.0V 3 VPT05548
Pin 1 Pin 2 Pin 3
Type VDS ID RDs(on) Package Marking
BSS 295 50 V 1.4 A 0.3 n TO-92 SS 295
Type Ordering Code Tape and Reel Information
BSS 295 Q67000-S238 E6288
BSS 295 Q67000-S105 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage ls 50 V
Drain-gate voltage VDGR
RGS = 20 kg 50
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 24 ( 1.4
DC drain current, pulsed leuls
TA = 25 ( 5.6
Power dissipation Ptot W
TA = 25 ( 1
Data Sheet 05.99
!eiy,f,i,y,tty,
ec no 09y
BSS 295
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
-55 ... + 150
Storage temperature
-55 ... + 150
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
55/150/56
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter
Symbol
Values
Static Characteristics
Drain- source breakdown voltage
VGS = O V, ID = 0.25 mA, T]: 25 (
V(BR)DSS
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
Zero gate voltage drain current
bbs=50V, VGS=OV, T] =25 (
VDS=5OV, Vss=0V, 7] =125 "C
bbs=30V, VGS=0V, 7] =25 (
Gate-source leakage current
VGS=20V, VDS=0V
Drain-Source on-state resistance
VGS = 4.5V, b =1.4A
RDS(on)
Data Sheet
