Home ›  B › B28 > BSS209PW,Low Voltage MOSFETs

BSS209PW Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BSS209PW	INFINEON	N/a	33000	avai	Low Voltage MOSFETs

BSS209PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 550 mΩDS(on)• Enhancement modeI -0.58 AD• Super Logic Level (2.5 V rat ..
BSS223PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 1.2 ΩDS(on)• Enhancement modeI -0.39 AD• Super Logic Level (2.5 V rate ..
BSS225 , SIPMOS® Small-Signal-Transistor
BSS229 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) BSS 229

---

BSS209PW
Low Voltage MOSFETs
Preliminary dataBSS 209PW
OptiMOS-P Small-Signal-TransistorProduct Summary
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSS 209PW
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSS 209PW
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSS 209PW
1 Power dissipationtot = f (TA)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.85 BSS 209PW
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
-0.45
-0.5
-0.55
-0.65 BSS 209PW
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10
BSS 209PW
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
BSS 209PW
thJS
Preliminary dataBSS 209PW
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.2
0.3
0.4
0.5
0.6
0.7
0.8
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
0.5
1.5
2.5
3.5
4.5
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
0.5
1.5
2.5
gfs
Preliminary dataBSS 209PW
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -0.58 A, VGS = -4.5 V
250
300
350
400
450
500
550
600
700
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = -3.5 µA
0.2
0.4
0.6
0.8
1.4
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-2 -10
-1 -10 -10 -10
BSS 209PW

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED