BSS159N ,Low Voltage MOSFETsFeaturesV 60 VDS• N-channelR 8ΩDS(on),max• Depletion modeI 0.13 ADSS,min• dv /dt ratedSOT-23Type Pa ..
BSS169 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSS169 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSS192P ,Low Voltage MOSFETsFeatureV -250 VDS• P-ChannelR 12 ΩDS(on)• Enhancement modeI -0.19 AD• Logic LevelSOT89• dv/dt rated ..
BSS209PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 550 mΩDS(on)• Enhancement modeI -0.58 AD• Super Logic Level (2.5 V rat ..
BSS223PW ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 1.2 ΩDS(on)• Enhancement modeI -0.39 AD• Super Logic Level (2.5 V rate ..
BZT52-C2V4S , 200mW SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-323 PACKAGE
BZT52C2V7 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C2V7 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C2V7 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C2V7S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C2V7S-7-F , SURFACE MOUNT ZENER DIODE
BSS159N
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
SIPMOS® Small-Signal-Transistor
Features
. N-channel
. Depletion mode
. dv/dt rated
BSS159N
Product Summary
V03 60 V
RDS(on),max 8
lDSSmin 0.13
drain pin3
source pin 2
Type Package Ordering Code Tape and Reel Information Marking
BSS159N SOT-23 Q67042-S1488 E6327: 3000 pcs/reel SGs
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TA=25 'C 0.23 A
TA=70 'C 0.18
Pulsed drain current lepuBe TA=25 'C 0.92
ID=0.23 A, VDS=60 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Tj'max=150 ''C
Gate source voltage VGS :20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1
Power dissipation Ptot TA=25 'C 0.36 W
Operating and storage temperature Ts, Tsta -55 ... 150 'C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.0 page 1 2004-02-19
CP""''"
Infineon
lechnologies
BSS159N
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RNA - - 350 KAN
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR,DSS VGS=-10 V, ID=250 pA 60 - - V
Gate threshold voltage Vegan) Vos---3 V, ID=26 pA -3.5 -2.8 -2.4
. VDS=60 V,
Drain-source leakage current ID (off) VGs=-10 V, Tr=25 "C - - 0.1 pA
VDS=60 V, 10
VGs=-10 V, Tj=125 'C - -
Gate-source leakage current less Vss--20 V, Vos=0 V - - 10 nA
Saturated drain current loss Vss--0 V, VDs=10 V 130 - - mA
Drain-source on-state resistance Rros(on) Vss--0 V, I D--0.07 A - 3.9 8 Q
VGS=10 V, ID=0.23 A - 1.8 3.5
lVDsl>2llolRDs(on)max,
Transconductance " [0:016 A 0.1 0.19 - s
Rev. 1.0 page 2 2004-02-19
