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BSS138P
60 V, 360 mA N-channel Trench MOSFET
1. Product profile
1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1cm2.
[2] Pulse test: tp≤ 300 μs; δ≤ 0.01.
BSS138P
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tamb =25 °C- - 60 V
VGS gate-source voltage Tamb =25 °C- - ±20 V drain current Tamb =25 °C; VGS =10V
[1] -- 360 mA
RDSon drain-source on-state
resistance =25 °C;
VGS =10V; = 300 mA
[2] -0.9 1.6 Ω
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning G gate source D drain
Table 3. Ordering informationBSS138P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesBSS138P AN*
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25 °C- 60 V
VGS gate-source voltage Tamb =25 °C- ±20 V drain current VGS =10V [1]
Tamb =25 °C- 360 mA
Tamb =100 °C- 230 mA
IDM peak drain current Tamb =25 °C;
single pulse;tp≤10μs
-1.2 A
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot total power dissipation Tamb =25°C [2] -350 mW
[1] -420 mW
Tsp =25°C - 1140 mW junction temperature 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Source-drain diode source current Tamb =25°C [1] -360 mA
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- 310 370 K/W
[2]- 260 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--115 K/W
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFETNXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.01.
Table 7. Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage =10 μA; VGS=0V 60 --V
VGS(th) gate-source threshold
voltage =250 μA; VDS =VGS 0.9 1.2 1.5 V
IDSS drain leakage current VDS =60V; VGS =0V =25°C --1 μA= 150°C --10 μA
IGSS gate leakage current VGS= ±20 V; VDS=0V - - 100 nA
RDSon drain-source on-state
resistance
[1]
VGS =5V; ID =50mA - 1 2 Ω
VGS =10V; ID =300 mA - 0.9 1.6 Ω
gfs forward
transconductance
VDS =10V; ID= 200 mA [1]- 700 - mS
Dynamic characteristicsQG(tot) total gate charge ID =300 mA;
VDS =30V;
VGS =4.5V 0.72 0.8 nC
QGS gate-source charge - 0.14 - nC
QGD gate-drain charge - 0.24 - nC
Ciss input capacitance VGS =0V; VDS =10V;
f=1MHz 3850pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -pF
td(on) turn-on delay time VDS =50V; =250Ω;
VGS =10V; =6Ω 26ns rise time -3 -ns
td(off) turn-off delay time - 9 20 ns fall time - 4 - ns
Source-drain diodeVSD source-drain voltage IS =115 mA; VGS=0V 0.47 0.75 1.1 V
NXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFETNXP Semiconductors BSS138P
60 V, 360 mA N-channel Trench MOSFET
