BSS138BKS ,60 V, 320 mA dual N-channel Trench MOSFETApplications Relay driver Low-side loadswitch High-speed line driver Switching circuits1.4 Quic ..
BSS138DW-7-F , DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS138DW-7-F , DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS138K ,50V N-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures• Low On-ResistanceD• Low Gate Threshold Voltage• Low Input Capacitance• Fast Switching Spe ..
BSS138LT1 ,Power MOSFET 200 mAmps, 50 VoltsFeatures 200 mA, 50 V• Pb−Free Packages are Available R = 3.5 DS(on)• Low Threshold Voltage (V : 0 ..
BSS138LT1G ,Power MOSFET 200 mAmps, 50 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)A2Rating Symbol Value UnitDrain−to−Source Voltage ..
BZT52C20T-7 , SURFACE MOUNT ZENER DIODE
BZT52C22S-7-F , SURFACE MOUNT ZENER DIODE
BZT52-C22V , SURFACE MOUNT SILICON ZENER DIODES
BZT52C24 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C24-7-F , SURFACE MOUNT ZENER DIODE
BZT52C24S , Planar Die Construction Ultra-Small Surface Mount Package
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1.5 kV AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 12 August 2011 Product data sheet
Table 1. Quick reference data
Per transistorVDS drain-source voltage Tj =25°C - - 60 V
VGS gate-source voltage -20 - 20 V drain current VGS =10V;
Tamb =25°C
[1] -- 320 mA
Static characteristics (per transistor)RDSon drain-source on-state
resistance
VGS =10V; =320 mA; Tj =25°C 1.6 Ω
NXP Semiconductors BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET Pinning information Ordering information Marking[1] % = placeholder for manufacturing site code.
Table 2. Pinning information
Table 3. Ordering informationBSS138BKS TSSOP6 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codesBSS138BKS LG%
NXP Semiconductors BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVDS drain-source voltage Tj =25°C - 60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tamb =25°C [1]- 320 mA
VGS =10V; Tamb= 100°C [1]- 210 mA
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 1.2 A
Ptot total power dissipation Tamb =25°C [2]- 280 mW
[1]- 320 mW
Tsp=25°C - 990 mW
Per devicePtot total power dissipation Tamb =25°C [2]- 445 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1]- 320 mA
ESD maximum ratingVESD electrostatic discharge voltage HBM [3]- 1500 V
NXP Semiconductors BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFETNXP Semiconductors BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristics
Per transistorRth(j-a) thermal resistance from junction to ambient in free air [1]- 390 445 K/W
[2]- 340 390 K/W
Rth(j-sp) thermal resistance from junction to solder point - - 130 K/W
Per deviceRth(j-a) thermal resistance from junction to ambient in free air [1]- - 300 K/W
