BSS129 ,N-Channel SIPMOS Small-Signal Transistor BSS 129
BSS129
N-Channel SIPMOS Small-Signal Transistor
( Infineon
technologies
SIPMOS© Small-Signal Transistor
o ' 240 V
0 ID 0.15 A
o RDSM 20n
o N channel
0 Depletion mode
0 High dynamic resistance
0 Available grouped in VGSM
BSS 129
C2isii:iigiit,,3
Type Ordering Tape and Reel Pin Configuration Marking Package
Code Information 1 2 3
BSS 129 Q62702-SO15 E6288: 1500 pcs/reel; G D S SS 129 TO-92
2 reels/carton; gate first
BSS 129 Q67000-S116 E6296: 1500 pcs/reel;
2 reels/carton; source first
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 240 V
Drain-gate voltage, RGS = 20 kn VDGR 240
Gate-source voltage Kss i 20
ESD Sensitivity (HBM) as per MIL-STD 883 - Class 1
Continuous drain current, TA = 37 ( h, 0.15 A
Pulsed drain current, TA = 25 ( [Dpuls 0.45
Max. power dissipation, TA = 25 ( Ptot 1.0 W
Operating and storage temperature range T, Tstg - 55 ... + 150 (
Thermal resistance, chip-ambient RthJA s 125 K/W
(without heat sink)
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56
Data Sheet 05.99
!eiy,f,i,y,tty,
ec no 09y
BSS 129
Electrical Characteristics
at T, = 25 ''C, unless otherwise specified.
Parameter
Symbol
Values
Static Characteristics
Drain-source breakdown voltage
VGS = - 3 V, h, = 0.25 mA
V(BR)DSS
Gate threshold voltage
VDS=3V,ID=1mA
VGS(th)
Drain-source cutoff current
VDS=24OV, "ss---3V
T, = 25 (
T =125°C
Gate-source leakage current
' = 20 V, VDS = 0
Drain-source on-resistance
"ss = 0 V, h, = 0.014 A
RDS(on)
Dynamic Characteristics
Forward transconductance
Input capacitance
V65: 0, VDS= 25V,f=1MHz
Output capacitance
"ss--0,r1,s--25V,f--1MHz
Reverse transfer capacitance
'rGs---0,K,s---25V,f=1MHz
Turn-on time ton, (ton = tum + tr)
VDD=3OV1VGS= -2V...+5V,Rss=50f2,
10:0.25A
td(on)
Turn-off time to, (U-- td(off) + t)
VDD=30V, V63: -2V...+5V,RGs=50f2,
h, = 0.25 A
td(off)
Data Sheet
