BSS125 ,N-Channel SIPMOS Small-Signal TransistorBSS 125 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• V = 1.5 ...2.5 VGS(th)Pin 1 ..
BSS125 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BSS127 , SIPMOS® Small-Signal-Transistor
BSS129 ,N-Channel SIPMOS Small-Signal Transistor BSS 129
BSS125
N-Channel SIPMOS Small-Signal Transistor
BSS 125
SIPMOS ® Small-Signal Transistor• N channel
• Enhancement mode
• VGS(th) = 1.5 ...2.5 V
Maximum Ratings
BSS 125
Maximum Ratings
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BSS 125
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BSS 125
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BSS 125
Power dissipation tot = ƒ(TA)20406080100120°C160A
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2 tot
Drain current D = ƒ(TA)
parameter: VGS ≥ 10 V20406080100120°C160A
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.11 D
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain-source breakdown voltage (BR)DSS = ƒ(Tj)
540
560
580
600
620
640
660
680
710 (BR)DSS
BSS 125
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs , Tj = 25 °C481216V24DS
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.24 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: tp = 80 μs, Tj = 25 °C
0.000.020.040.060.080.100.120.14A0.18D
10
20
30
40
50
60
70
80
90
100
110
120
140 DS (on)
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 μsDS≥ 2 x ID x RDS(on)max
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.22 D
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.00
0.05
0.10
0.15
0.25 fs
