BSS123LT1G-- ,TMOS FET TransistorMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BSS123W-7-F , N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS124 , SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSS125 ,N-Channel SIPMOS Small-Signal TransistorBSS 125 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• V = 1.5 ...2.5 VGS(th)Pin 1 ..
BSS125 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BSS127 , SIPMOS® Small-Signal-Transistor
BZT52C13-7-F , SURFACE MOUNT ZENER DIODE
BZT52C13S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C13S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C13S-7-F , SURFACE MOUNT ZENER DIODE
BZT52C15 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52C15 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BSS123LT1-BSS123LT1G-BSS123LT1G--
TMOS FET Transistor
BSS123LT1
Preferred DevicePower MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features Pb−Free Packages are Available
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS The Power Dissipation of the package may result in a lower continuous drain
current. Pulse Width � 300 �s, Duty Cycle � 2.0%. FR−5 = 1.0 � 0.75 � 0.062 in.
