BSS123 ,N-channel TrenchMOS(TM) transistor Logic Level FETLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
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BSS123LT1G ,TMOS FET TransistorMAXIMUM RATINGSRating Symbol Value UnitDrain−Source Voltage V 100 VdcDSSGate−Source Voltage 1− Cont ..
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BSS123
N-channel TrenchMOS(TM) transistor Logic Level FET
Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
FEATURES SYMBOL QUICK REFERENCE DATA ’Trench’ technology Extremely fast switching VDSS = 100 V
Logic level compatible
Subminiature surface mounting ID = 150 mA
package RDS(ON) ≤ 6 Ω (VGS = 10 V)
GENERAL DESCRIPTION PINNING SOT23N-channel enhancement mode
PIN DESCRIPTIONfield-effect transistorina plastic
envelope using ’trench’ 1 gate
technology. source
Applications:- Relay driver 3 drain High-speed line driver Telephone ringer
The BSS123is suppliedin the
SOT23 subminiature surface
mounting package.
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDSS Drain-source voltage Tj = 25 ˚C to 150˚C - 100 V
VDGR Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 100 V
VGS Gate-source voltage - ± 20 V Continuous drain current Ta = 25 ˚C - 150 mA
IDM Pulsed drain current Ta = 25 ˚C - 600 mA Total power dissipation Ta = 25 ˚C - 0.25 W
Tj, Tstg Operating junction and - 55 150 ˚C
storage temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNITRth j-a Thermal resistance junction surface mounted on FR4 board 500 - K/W
to ambient
2
Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 10 μA 100 130 - V
voltage
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 1 2 2.8 V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 120 mA - 3.5 6 Ω
resistance
gfs Forward transconductance VDS = 25 V; ID = 120 mA - 350 - mS
IDSS Zero gate voltage drain VDS = 60 V; VGS = 0 V - 10 100 nA
current
IGSS Gate source leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA
ton Turn-on time VDD = 50 V; RD = 250 Ω; VGS = 10 V; - 3 10 ns
RG = 50 Ω; Resistive load
toff Turn-off time - 12 20 ns
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 23 40 pF
Coss Output capacitance - 6 25 pF
Crss Feedback capacitance - 4 10 pF
Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
MECHANICAL DATA
Fig.1. SOT23 surface mounting package.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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