BSS101 ,N-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 240 - -GS ..
BSS101 ,N-Channel SIPMOS Small-Signal TransistorCharacteristics, at T = 25˚C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BSS101 ,N-Channel SIPMOS Small-Signal Transistor BSS 101 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Logic Level• V = 0 ..
BSS110 ,P-channel enhancement mode vertical D-MOS transistor
BSS110 ,P-channel enhancement mode vertical D-MOS transistor
BSS119 ,SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BZT52C10S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C10S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C11 , Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden fur die Oberflahenmontage
BZT52-C11 , SURFACE MOUNT SILICON ZENER DIODES
BZT52-C11 , SURFACE MOUNT SILICON ZENER DIODES
BZT52C11-7 , SURFACE MOUNT ZENER DIODE
BSS101
N-Channel SIPMOS Small-Signal Transistor
Infineon
technologies
BSS 101
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level I 2
q VGSM = 0.8...2.0V 5 VPT05548
Pin 1 Pin 2 Pin 3
Type VDS ID RDSion) Package Marking
BSS101 240V 0.13A 16 Q TO-92 SS101
Type Ordering Code Tape and Reel Information
BSS 101 C62702-S493 E6288
BSS 101 C62702-S636 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDS 240 V
Drain-gate voltage VDGR
Res = 20 kg 240
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 33 ( 0.13
DC drain current, pulsed leuls
TA = 25 ( 0.52
Power dissipation Ptot W
TA = 25 ( 0.63
Data Sheet 1 05.99
!eiy,f,i,y,tty,
ec no 09y
BSS 101
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
-55 ... + 150
Storage temperature
-55 ... + 150
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
55/150/56
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter
Symbol
Values
Static Characteristics
Drain- source breakdown voltage
VGS = O V, ID = 0.25 mA, T]: 25 (
V(BR)DSS
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
Zero gate voltage drain current
bbs=240V, VGS= 0V, Ti=25''C
VDS = 240 V, VGS = 0V, 7] =125 (
VDS=13OV, VGS= 0V, 71:25 (
Gate-source leakage current
VGS=20V, VDS=0V
Drain-Source on-state resistance
VGS =1OV, ID = 0.13A
VGS = 4.5 V, b = 0.13 A
RDS(on)
Data Sheet
