BSR43 ,80V NPN MEDIUM POWER TRANSISTOR IN SOT89
BSR43 ,80V NPN MEDIUM POWER TRANSISTOR IN SOT89applications.DESCRIPTION2NPN medium power transistor in a SOT89 plastic 3package. PNP complements: ..
BSR43 ,80V NPN MEDIUM POWER TRANSISTOR IN SOT89
BSR43 ,80V NPN MEDIUM POWER TRANSISTOR IN SOT89
BSR50 ,NPN Darlington Transistorapplications requiring extremely high gain at collector currents to 0.5A.• Sourced from Process 06. ..
BSR52 ,Trans Darlington NPN 80V 1A 3-Pin SPT Ammo
BZT52B5V6 , Surface mount Silicon Planar Zener Diodes
BZT52-B6V2S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B6V2S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B8V2S , SURFACE MOUNT SILICON ZENER DIODES
BZT52C10S , Planar Die Construction Ultra-Small Surface Mount Package
BZT52C10S , Planar Die Construction Ultra-Small Surface Mount Package
BSR41-BSR43
60 V, 1 A NPN medium power transistor
NXP Semiconductors Product data sheet
NPN medium power transistors BSR40; BSR41;
BSR42; BSR43
FEATURES High current (max. 1 A) Low voltage (max. 80 V).
APPLICATIONS Thick and thin-film circuits Telephony and general industrial applications.
DESCRIPTIONNPN medium power transistor in a SOT89 plastic
package. PNP complements: BSR30; BSR31 and BSR33.
MARKING
ORDERING INFORMATION
NXP Semiconductors Product data sheet
NPN medium power transistors BSR40; BSR41; BSR42;
BSR43
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
NXP Semiconductors Product data sheet
NPN medium power transistors BSR40; BSR41; BSR42;
BSR43
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
NXP Semiconductors Product data sheet
NPN medium power transistors BSR40; BSR41; BSR42;
BSR43
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
NPN medium power transistors BSR40; BSR41; BSR42;
BSR43
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
