BSR31 ,60 V, 1 A PNP medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSR33 ,80V PNP MEDIUM POWER TRANSISTOR IN SOT89applications• Thick and thin-film circuits.2DESCRIPTIONPNP medium power transistor in a SOT89 plast ..
BSR41 ,60 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSR42 ,SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
BSR42 ,SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
BSR43 ,80V NPN MEDIUM POWER TRANSISTOR IN SOT89
BZT52B18S , SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 3 to 39 Volts POWER RATING 410 mWatts
BZT52-B18S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B4V3S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B4V3S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B4V3S , SURFACE MOUNT SILICON ZENER DIODES
BZT52-B5V1S , SURFACE MOUNT SILICON ZENER DIODES
BSR31-BSR33
60 V, 1 A PNP medium power transistor
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
FEATURES High current (max. 1 A) Low voltage (max. 80 V).
APPLICATIONS Telephony and general industrial applications Thick and thin-film circuits.
DESCRIPTIONPNP medium power transistor in a SOT89 plastic package.
NPN complements: BSR40; BSR41 and BSR43.
MARKING
ORDERING INFORMATION
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp = 300 μs; δ < 0.01.
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
