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BSR18A from FAI,Fairchild Semiconductor

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BSR18A

Manufacturer: FAI

PNP General Purpose Amplifier

Partnumber Manufacturer Quantity Availability
BSR18A FAI 1670 In Stock

Description and Introduction

PNP General Purpose Amplifier The part **BSR18A** is manufactured by **FAI**.  

**FAI specifications** for their products typically include:  
- **Material:** High-quality components  
- **Performance:** Meets or exceeds OEM standards  
- **Testing:** Rigorous quality control and testing procedures  
- **Compatibility:** Designed to match original equipment fit and function  

For exact specifications, refer to FAI's official documentation or product datasheets.

Partnumber Manufacturer Quantity Availability
BSR18A NXP/PHILIPS 3000 In Stock

Description and Introduction

PNP General Purpose Amplifier The BSR18A is a general-purpose NPN bipolar junction transistor (BJT) manufactured by NXP/Philips.  

### **Key Specifications:**  
- **Transistor Type:** NPN  
- **Maximum Collector-Base Voltage (VCB):** 30V  
- **Maximum Collector-Emitter Voltage (VCE):** 25V  
- **Maximum Emitter-Base Voltage (VEB):** 5V  
- **Continuous Collector Current (IC):** 100mA  
- **Total Power Dissipation (Ptot):** 300mW  
- **DC Current Gain (hFE):** 40–250 (at IC = 2mA, VCE = 5V)  
- **Transition Frequency (fT):** 250MHz (typical)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Package Type:**  
- **SOT-23** (Surface-mount package)  

The BSR18A is commonly used in amplification and switching applications.  

Would you like additional details on pin configuration or equivalent alternatives?

Partnumber Manufacturer Quantity Availability
BSR18A FAIRCHILD 3000 In Stock

Description and Introduction

PNP General Purpose Amplifier The BSR18A is a PNP bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor.  

### **Key Specifications:**  
- **Type:** PNP BJT  
- **Collector-Base Voltage (VCBO):** -30V  
- **Collector-Emitter Voltage (VCEO):** -25V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1A  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 40-250 (at IC = -150mA, VCE = -1V)  
- **Transition Frequency (fT):** 100MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-92  

This transistor is commonly used in amplification and switching applications.  

*Source: Fairchild Semiconductor datasheet.*

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