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BSP89
Low Voltage MOSFETs
Infineon
technologies
SIPMOS co Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level
. vesah) = 0.8...2.0V
BSP 89
1 VP80556O
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDS(on) Package Marking
BSP 89 240 V 0.36 A 6 f2 SOT-223 BSP 89
Type Ordering Code Tape and Reel Information
BSP 89 Q67000-S652 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage VDs 240 V
Drain-gate voltage VDGR
Rss = 20 kg 240
Gate source voltage VGS i 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 29 ( 0.36
DC drain current, pulsed leuIs
TA = 25 ( 1.44
Power dissipation Ptot W
TA = 25 ( 1.7
Data Sheet 1 05.99
Infineon BSP 89
technologies
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature T, -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA f 72 KNV
Thermal resistance, junction-soldering point 1) Rth f 12
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1 55/ 150/56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Ti = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGs = 0 V, ID = 0.25 mA, T, = 25 ( 240 - -
Gate threshold voltage VGsah)
Kss=vbs, ID = 1 mA 0.8 1.5 2
Zero gate voltage drain current IDSS pA
VDS=240V, VGS=0V, 7]=25°C - 0.1 1
VDS=240V,VGS=0V, Tj=125°C - 10 100
bbs=60V,Vss=0V, Tj=25°c - - 0.2
Gate-source leakage current IGSS nA
Vss=20V,bbs=0V - 10 100
Drain-Source on-state resistance RDS(0n) Q
VGs = 10 V, ID = 0.36 A - 3.5 6
vss = 4.5 V, ID = 0.36 A - 4 10
Data Sheet 2 05.99
