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BSP75A-BSP75A E6327-BSP75AE6327
HITFET Smart Low Side Power Switch
HITFET® BSP 75A
Smart Lowside Power Switch
Features• Logic Level Input
• Input protection (ESD)
• Thermal shutdown (with restart)
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
Application• All kinds of resistive, inductive and capacitive loads in switching applications
• μC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
Vbb
LOAD
Product SummaryVDS55RDS(ON)550ID(lim)1AID(ISO)0.7EAS550
HITFET® BSP 75A
Maximum Ratings at Tj=25°C unless otherwise specified R=internal resistance of the load dump test pulse generator LD200
HITFET® BSP 75A
Electrical Characteristics
Static Characteristics
Dynamic characteristics
HITFET® BSP 75A
Protection Functions
Inverse Diode
Circuit DescriptionThe BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designed
for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-
plications.
Protection functionsOvervoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about
63 V) when inductive loads are switched off.
Current limitation: By means of an internal current measurement the drain current is lim-ited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
linear region, so power dissipation may exceed the capability of the heatsink. This opera-
tion leads to an increasing junction temperature until the overtemperature threshold is
reached.
Overtemperature and short circuit protection: This protection is based on sensing thechip temperature. The location of the sensor ensures a fast and accurate junction tem-
perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).
HITFET® BSP 75A
Block diagram
Terms
HITFETDINDVDS1IN
VbbL
Input circuit (ESD protection)ESD zener diodes are not designed for DC
current.
Inductive and overvoltage output clampHITFET
VIN
VDS
VBB
VDS(AZ)
Turn on into overload or short circuitVIN
ID(lim)
Shut down by overtemperature and restart by
cooling. Current internally limited at ID(lim).
HITFET® BSP 75A
Maximum allowable power dissipation
Ptot = f (TC)Ptot [W]
TC [°C]
On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 5 VRON [mΩ]
Tj [°C]
On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 10 VRON [mΩ]
Tj [°C]
Typ. input threshold voltage
VIN(th) = f (Tj); ID= 10 mA; VDS= 12 VVIN(th) [V]
Tj [°C]
