BSP752R ,Smart Power High-Side-SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BSP752-R ,Smart High Side SwitchesBlock Diagram+ VbbVoltageOvervoltage Current Gatesourceprotection limitprotectionVLogicOUTLimit for ..
BSP752T ,Smart Power High-Side-SwitchGeneral DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible ..
BSP752-T ,Smart High Side SwitchesBlock Diagram+ VbbVoltageGateOvervoltage Currentsourceprotection limit protectionVLogicOUTLimit for ..
BSP75A ,HITFET Smart Low Side Power SwitchCharacteristicsDrain source clamp voltage V 55 -- 70 VDS(AZ) I = 10 mA T =-40...+150°C:D jOff stat ..
BSP75A ,HITFET Smart Low Side Power SwitchGeneral Description N channel vertical power FET in Smart Power Technology. Fully protected by embe ..
BZT03C120 ,Silicon Z-Diodes and Transient Voltage SuppressorsElectrical CharacteristicsT = 25
BSP752R
Smart Power High-Side-Switch
BSP 752 R
Smart Power High-Side-Switch
Product Summary
Features• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• Open drain diagnostic output for overtemperature
and short circuit
• Open load detection in OFF - State
with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current
Application• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V, 24 V and 42 V DC applications
• Replaces electromechanical relays and discrete circuits
General DescriptionN channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
BSP 752 R
Block DiagramSignal GND
miniPROFET
Load GND
VLogic
Pin configuration
BSP 752 R
Maximum Ratings at Tj = 25°C, unless otherwise specified
Thermal Characteristics1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
BSP 752 R
Electrical Characteristics
Load Switching Capabilities and Characteristics
Operating Parameters
BSP 752 R
Electrical Characteristics
Protection Functions1)
Reverse Battery1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
.2not subject to production test, specified by design
3 see also VON(CL) in circuit diagram on page 8
4Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
BSP 752 R
Electrical Characteristics
Input and Status feedback
Diagnostic Characteristics1no delay time after overtemperature switch off and short circuit in on-state
BSP 752 R*) Out ="L": VOUT < 2.8V typ.
**) Out ="H": VOUT > 2.8V typ.
Z = high impedance, potential depends on external circuit
BSP 752 R
TermsInductive and overvoltage output clamp
PROFETIN
OUT
GNDSTVINSTINbbLOUTIGNDONGND
GNDON clamped to 59V min.
Overvoltage protection of logic partInput circuit (ESD protection)GNDRIIIESD-
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommendedZ1=6.1V typ., VZ2=Vbb(AZ)=62V min.,I=3.5 kΩ typ., RGND=150Ω
Reverse battery protection
Status outputGND
LogicSTR
± 5V
OUTR
Power GND
GNDR
Signal GND
Power
InverseR
Vbb-
Diode
GND
ESD-
+5VST(ON)GND=150Ω, RI=3.5kΩ typ.,
Temperature protection is not active during
inverse current
BSP 752 R
Open-load detectionOFF-state diagnostic condition: OUT > 3V typ.; IN=low
bb disconnect with charged inductive
load
PROFETIN
OUT
GNDbb
high
Open load
detectionLogic
unitOUT
Signal GNDEXTO
OFF
GND disconnect
PROFETIN
OUT
GNDbbVINVSTVGND
Inductive Load switch-off energy
dissipationGND disconnect with GND pull up
PROFETIN
OUT
GNDbbVGNDINVST
Energy stored in load inductance: EL = ½ * L * IL2
While demagnetizing load inductance,
the enérgy dissipated in PROFET isAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:ILVVIROUTCL
OUTCL=++**(|)*ln(*)()|21
