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Partno	Mfg	Dc	Qty	Available	Descript
BSP603S2L	Infineon	N/a	32000	avai	Low Voltage MOSFETs

BSP603S2L ,Low Voltage MOSFETsCharacteristicsV 55 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
BSP61 ,PNP Silicon Darlington TransistorCharacteristics at T = 25°C, unless othertwise specifiedAParameter Symbol Values Unitmin. typ. max. ..
BSP61 ,PNP Silicon Darlington Transistor
BSP613P ,P-Channel SIPMOS Small-Signal Transistor
BSP615S2L ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 55 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
BSP62 ,PNP Silicon Darlington Transistor
BZM55C3V9 ,ZENER DIODESAbsolute Maximum RatingsT = 25

BSP603S2L
Low Voltage MOSFETs
BSP603S2L
OptiMOS Power-Transistor
Product Summary
Feature
• N-Channel
• Enhancement mode
• Logic Level
SOT 223
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
BSP603S2L
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
BSP603S2L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
BSP603S2L
1 Power dissipationtot = f (TC)
parameter: VGS≥ 4 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.4 BSP603S2L
tot
2 Drain currentD = f (TC)
parameter: VGS≥ 10 V
0.5
1.5
2.5
3.5
4.5 BSP603S2L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSP603S2L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = --
-2 10
-1 10 10 10 10
BSP603S2L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
11
13 BSP603S2L
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
20
30
40
50
60
70
80
90
110
BSP603S2L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
11
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
12
14
16
18
20
22
BSP603S2L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 2.6 A, VGS = 10 V
10
20
30
40
50
60
70
80
100 BSP603S2L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
BSP603S2L

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