BSP50 ,NPN Darlington transistors
BSP50 ,NPN Darlington transistorsFEATURES PINNING• High current (max. 1 A)PIN DESCRIPTION• Low voltage (max. 80 V)1 base• Integrated ..
BSP50 ,NPN Darlington transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BSP50 ,NPN Darlington transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BSP51 ,NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BSP51 ,NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BSP50; BSP51; BSP52NPN Darlington transist ..
BZM55B56 ,Silicon Epitaxial Planar Z-DiodesApplicationsVoltage stabilization
BZM55B68 ,Silicon Epitaxial Planar Z-DiodesAbsolute Maximum RatingsT = 25
BSP50
NPN Darlington transistors
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
FEATURES High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor.
APPLICATIONS Industrial high gain amplification.
DESCRIPTIONNPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICSTj = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
PACKAGE OUTLINE
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
DATA SHEET STATUS
Notes Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
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System of IEC 60134) may cause permanent damage to
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Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
