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BSP320
SIPMOS Small-Signal-Transistor
Infineon
technologies
SIPMOS© Small-Signal-Transistor BSP 320S
Features Product Summary
. N channel Drain source voltage
. Enhancement mode Drain-Source on-state resistance
q Avalanche rated Continuous drain current
o d v/dt rated
1 vpsosnea
Type Package Ordering Code Pin 1 Pin 214 Pin 3
BSP320S SOT-223 Q67000-S4001 G D s
Maximum Ratings , at T] = 25 ''C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID 2.9 A
Pulsed drain current leulse 11.6
TA = 25 (
Avalanche energy, single pulse EAS 60 mJ
ID: 2.9 A, VDD = 25 V, Rss = 25 Q
Avalanche current,periodic limited by Timax IAR 2.9 A
Avalanche energy, periodic limited by Timax EAR 0.18 mJ
Reverse diode d v/dt dv/dt 6 kV/ps
IS = 2.9 A, VDS = 20 V, di/dt= 200 Alps,
ijax = 150 "C
Gate source voltage VGS :20 V
Power dissipation Ptot 1.8 W
TA = 25 (
Operating temperature Ti -55 ... +150 (
Storage temperature Tsta -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet 1 05.99
!eiy,f,i,y,tty,
ec no 09y
BSP 320S
Electrical Characteristics
Parameter
at Ti = 25 °C, unless otherwise specified
Symbol
Values
Thermal Characteristics
Thermal resistance, junction - soldering point (Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling areal)
Static Characteristics
Drain- source breakdown voltage
VGS = O V, ID = 0.25 mA
V(BR)DSS
Gate threshold voltage, VGS = VDS
ID = 20 pA
VGS(th)
Zero gate voltage drain current
VDS=60V, VGS= 0V, Tj= 25 0C
bbs=60V, VGS= 0V, Tj=150 C
Gate-source leakage current
VGs=20V,VDs=0V
Drain-Source on-state resistance
VGS = 10 V, ID: 2.9 A
RDS(on)
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
