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BSP318S
N-Channel SIPMOS Small-Signal Transistor
BSP318SFinal data
SIPMOS Small-Signal-Transistor
Features• N-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
Product Summary
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
BSP318SFinal data
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
BSP318SFinal data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
BSP318SFinal data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Reverse Diode
BSP318SFinal data
Power Dissipationtot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.9
tot
Drain currentD = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.8
Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 10
-1 10 10 10 10
Transient thermal impedancethJA = f(tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10
thJA
BSP318SFinal data
Typ. output characteristicD = f (VDS); Tj=25°C
parameter: t= 80 μs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5
Typ. transfer characteristics ID= f ( VGS )DS≥ 2 x ID x RDS(on)max
parameter: tp = 80 μs
10
11
12
15
Drain-source on-resistanceDS(on) = f (Tj)
parameter : I = 2.6 A, VGS = 4.5 V
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.36
DS(on)
Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = 20 μA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
3.0
GS(th)
