BSP315P ,Low Voltage MOSFETsFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-Source on- ..
BSP315P L6327 , SIPMOS® Small-Signal-Transistor
BSP316 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP316 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP316P ,Low Voltage MOSFETsFeatureV -100 VDS• P-ChannelR 1.8 ΩDS(on)• Enhancement modeI -0.68 AD• Logic LevelP-SOT223-4-1• dv/ ..
BSP317 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BZG05C51 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP315P
Low Voltage MOSFETs
BSP 315 PPreliminary data
SIPMOS Small-Signal-Transistor
Features• P-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
Product Summary
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
BSP 315 PPreliminary data
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
BSP 315 PPreliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
BSP 315 PPreliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Reverse Diode
BSP 315 PPreliminary data
Drain currentD = f(TA)
parameter :V≥ −10V
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.3
Power Dissipationtot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.9
tot
Transient thermal impedancethJC = f (tp)
parameter : D = t/T
-2 10
-1 10 10 10 10
thJC
Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10
BSP 315 PPreliminary data
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
DS(on)
Typ. output characteristicsD = f (VDS)
parameter: t = 80 μs
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.8
Typ. transfer characteristics ID= f ( VGS )DS≥ 2 x ID x RDS(on)max
parameter: tp = 80 μs
0.0
-0.5
-1.0
-1.5
-2.0
-3.0
Typ. forward transconductancegfs = f(ID); Tj=25°C
parameter: gfs
0.0
0.5
1.0
1.5
2.5
